Publikationen
2024
Abstract
Optical properties of cubic InxGa1-xN (0 ≤ x ≤ 1)
Rose, Jonas; Baron, Elias; Zscherp, Elias; Jentsch, Silas; Goldhahn, Rüdiger; Chatterjee, Sangam; Schörmann, Jörg; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - O'ahu, Hawai . - 2024, Artikel P39 [Workshop: International Workshop on Nitride Semiconductors, IWN 2024, O'ahu, Hawai'i, November 3-8, 2024]
Corrosion of ScN heated up to 900 K at ambientlab conditions
Gümpel, Jona; Baron, Elias; Bläsing, Jürgen; Hörich, Florian; Dempewolf, Anja; Dadgar, Armin; Goldhahn, Rüdiger; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - O'ahu, Hawai . - 2024, Artikel P34 [Workshop: International Workshop on Nitride Semiconductors, IWN 2024, O'ahu, Hawai'i, November 3-8, 2024]
Highly doped nitrides: correlation between plasma frequencies and band gap shifts
Baron, Elias; Goldhahn, Rüdiger; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - O'ahu, Hawai . - 2024 [Workshop: International Workshop on Nitride Semiconductors, IWN 2024, O'ahu, Hawai'i, November 3-8, 2024]
Femtosecond pump-probe ellipsometry of degenerately doped cubic GaN
Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Espinoza, Shirly; Zahradnik, Martin; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - O'ahu, Hawai . - 2024 [Workshop: International Workshop on Nitride Semiconductors, IWN 2024, O'ahu, Hawai'i, November 3-8, 2024]
n-type doping of GaN via pulsed sputter epitaxy
Hörich, Florian; Bläsing, Jürgen; Grümbel, Jona; Feneberg, Martin; Goldhahn, Rüdiger; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.4 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Red shift of the absorption onset in orthorhombic κ-(InxGa1−x)2O3 alloys
Kluth, Elias; Karg, Alexander; Eickhoff, Martin; Goldhahn, Rüdiger; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL25.2 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Photoluminescence study of corundum-like α-Ga2O3
Hölzer, Lennart; Kluth, Elias; Goldhahn, Rüdiger; Jeon, Dae-Woo; Akaiwa, Kazuaki; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL25.1 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Red shift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3
Kluth, Elias; Fay, Michael; Parmenter, Christopher; Roberts, Joseph; Smith, Emily; Stoppiello, Craig; Massabuau, Fabien; Goldhahn, Rüdiger; Feneberg, Martin
In: International Workshop on Gallium Oxide and Related Materials - Berlin . - 2024, S. 34, Artikel WEP_14 [International Workshop on Gallium Oxide and Related Materials, IWGO 2024, Berlin, May 26 - 31, 2024]
Red shift of the absorption onset in orthorhombic κ-(InxGa1−x)2O3 alloys
Kluth, Elias; Karg, Alexander; Eickhoff, Martin; Goldhahn, Rüdiger; Feneberg, Martin
In: International Workshop on Gallium Oxide and Related Materials - Berlin . - 2024, S. 23, Artikel MoP_39 [International Workshop on Gallium Oxide and Related Materials, IWGO 2024, Berlin, May 26 - 31, 2024]
Phases of sputtered HfxNy: XRD, Ellipsometry and Raman spectroscopy studies
Grümbel, Jona; Lüttich, Christopher; Bläsing, Jürgen; Dadgar, Armin; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.11 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Temperature dependent free carrier concentration in GaN:Si
Harms, Christina; Grümbel, Jona; Goldhahn, Rüdiger; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 36.58 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Multiphonon Raman scattering in rocksalt ScN
Wolf, Stefan; Grümbel, Jona; Oshima, Yuichi; Lüttich, Christopher; Hörich, Florian; Dadgar, Armin; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.9 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Optical properties of cubic InxGa1−xN thin films
Rose, Jonas; Baron, Elias; Goldhahn, Rüdiger; Zscherp, Mario; Jentsch, Silas A.; Chatterjee, Sangam; Schörmann, Jörg; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.2 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Time-resolved ellipsometry on degenerately doped cubic GaN
Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Espinoza, Shirly; Zahradník, Martin; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.1 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]
Begutachteter Zeitschriftenartikel
Blue shift of the absorption onset and bandgap bowing in rutile GexSn1−xO2
Kluth, Elias; Nagashima, Yo; Osawa, Shohei; Hirose, Yasushi; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin
In: Applied physics letters - Melville, NY : American Inst. of Physics, Bd. 125 (2024), Heft 12, Artikel 122102, insges. 6 S.
Band gaps and phonons of quasi-bulk rocksalt ScN
Grümbel, Jona; Goldhahn, Rüdiger; Feneberg, Martin; Oshima, Yuichi; Dubroka, Adam; Ramsteiner, Manfred
In: Physical review materials - College Park, MD : APS, Bd. 8 (2024), Heft 7, Artikel L071601, insges. 8 S.
Polarity in liquid crystals formed by self-assembled umbrella-shaped subphthalocyanine mesogens
Murad, Ahmad; Baron, Elias; Feneberg, Martin; Baumann, Maximilian; Lehmann, Matthias; Eremin, Alexey
In: ACS applied materials & interfaces / American Chemical Society - Washington, DC : Soc., Bd. 16 (2024), Heft 19, S. 25025-25032
2023
Abstract
Analysis of pump-probe absorption edge spectroscopy on cubic GaN
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Espinoza, Shirly; Zahradník, Martin; Deppe, Michael; As, Donat J.
In: WSE 2023 - Prag, Artikel 06-Tu-O
Topologically-assisted self-assembly driven tilting in nematic liquid crystal hybrids with dendronised nanoparticles
Hähsler, Martin; Nadasi, Hajnalka; Feneberg, Martin; Marino, Sebastian; Geisselmann, Frank; Ermin, Alexey; Behrens, Silke
In: ICMF 2023 - Granada, S. 94, Artikel PP-OP-16
Optical properties of rocksalt ScN
Feneberg, Martin; Grümbel, Jona; Lüttich, Christopher; Dadgar, Armin; Oshima, Yuichi; Dubroka, Adam; Ramsteiner, Manfred; Goldhahn, Rüdiger
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH2-2
Photovoltaic and nonlinear optical properties of complex self-assembled liquid crystal structures
Murad, Ahmad; Eremin, Alexey; Feneberg, Martin; Baumann, Maximilian; Lehmann, Matthias; Allasar, Mohamed
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel CPP 7.3
Temperature dependent Raman spectroscopy on GaN:Si
Harms, Christina; Grümbel, Jona; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 33.42
Optical properties of ScN films grown by HVPE and sputter epitaxy
Grümbel, Jona; Oshima, Yuichi; Lüttich, Christopher; Dadgar, Armin; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.9
Temperature dependent spectroscopic ellipsometry on cubic GaN
Rose, Jonas; Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.10
Temperature dependent spectroscopic ellipsometry on cubic GaN
Rose, Jonas; Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: WSE 2023 - Prag, Artikel 61-We-O
Anisotropic IR active phonon modes and fundamental direct band-to-band transitions in α-(AlxGa1−x)2O3 alloys grown by MOCVD
Kluth, Elias; Bhuiyan, A F M Anhar Uddin; Meng, Lingyu; Zhao, Hongping; Goldhahn, Rüdiger; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 41.4
Begutachteter Zeitschriftenartikel
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Egbo, Kingsley; Luna, Esperanza; Lähnemann, Jonas; Hoffmann, Georg F.; Trampert, Achim; Grümbel, Jona; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Bierwagen, Oliver
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 133 (2023), Heft 4, Artikel 045701, insges. 11 S.
Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN II - absorption edge shift with gain and temperature effects
Baron, Elias; Goldhahn, Rüdiger; Espinoza, Shirly; Zahradník, Martin; Rebarz, Mateusz; Andreasson, Jakob; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 7, Artikel 075703, insges. 8 S.
Time-resolved pump-probe spectroscopic ellipsometry of cubic GaN. I. - Determination of the dielectric function
Baron, Elias; Goldhahn, Rüdiger; Espinoza, Shirly; Zahradník, Martin; Rebarz, Mateusz; Andreasson, Jakob; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 7, Artikel 075702, insges. 11 S.
Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1−x)2O3 alloys
Kluth, Elias; Anhar Uddin Bhuiyan, A. F. M.; Meng, Lingyu; Bläsing, Jürgen; Zhao, Hongping; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin
In: Japanese journal of applied physics - Bristol : IOP Publ., Bd. 62 (2023), Heft 5, Artikel 051001, insges. 8 S.
Synthesis and structural characterization of divalent transition metal alkynylamidinate complexes
Wang, Sida; Liebing, Phil; Feneberg, Martin; Sroor, Farid M.; Engelhardt, Felix; Hilfert, Liane; Busse, Sabine; Kluth, Elias; Goldhahn, Rüdiger; Edelmann, Frank T.
In: European journal of inorganic chemistry - Weinheim : Wiley-VCH, Bd. 26 (2023), Heft 14, Artikel e202300027
Redshift and amplitude increase in the dielectric function of corundum-like -(TixGa1 x)2O3
Kluth, Elias; Fay, Michael; Parmenter, Christopher; Roberts, Joseph; Smith, Emily Rose; Stoppiello, Craig; Massabuau, Fabien; Goldhahn, Rüdiger; Feneberg, Martin
In: Applied physics letters - Melville, NY : American Inst. of Physics, Bd. 122 (2023), Heft 9, Artikel 092101, insges. 7 S.
Dissertation
Effekte freier Ladungsträger auf die optischen Eigenschaften von kubischem Galliumnitrid
Baron, Elias; Feneberg, Martin
In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2023, 1 Online-Ressource (ix, 122 Seiten, 4,87 MB) [Literaturverzeichnis: Seite 111-121]
2022
Abstract
The polar phases of umbrella-shaped star mesogens
Lehmann, M.; Baumann, M.; Murad, Ahmad; Feneberg, Martin; Eremin, Alexey; Singh, D.; Kantorovich, Sofia
In: 28th International Liquid Crystal Conference, ILCC 2022 - Lisbon, 2022 . - 2022
Ultra-fast change of the absorption onset in undoped cubic GaN
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Espinoza, Shirly; Zahradník, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Determination of relaxation in thin InGaAs-films by Raman spectroscopy
Friedemann Schulz, Johann; Henksmeier, Tobias; Feneberg, Martin; Kluth, Elias; Reuter, Dirk; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Shift of the absoption onset in corundum-like α-(TixGa 1 x) 2O 3
Kluth, Elias; Fay, Michael; Parmenter, Christopher; Roberts, Joseph; Massabuau, Fabien; Goldhahn, Rüdiger; Feneberg, Martin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Impact of growth techniques and post-growth annealing on electronic and phononic properties of -Ga2O3
Janzen, Benjamin M.; Peltason, Vivien F. S.; Hajizadeh, Níma; Hartung, Conrad; Marggraf, Marcella N.; Nippert, Felix; Gillen, Roland; Maultzsch, J.; Mazzolini, Piero; Fornari, Roberto; Bosi, Matteo; Seravalli, Luca; Karg, Alexander; Eickhoff, Martin; Kneiß, Max; Wenckstern, Holger; Grundmann, Marius; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Ardenghi, Andrea; Bierwagen, Oliver; Wagner, Markus R.
In: The 4th International Workshop on Gallium Oxide and Related Materials - The IWGO2022 Steering Committee, 2022 . - 2022, S. 206-207
Anisotropic IR active phonon modes and fundamental direct band-to-band transitions in α-(AlxGa1-x)2O3 alloys grown by MOCVD
Kluth, Elias; Bhuiyan, A. F. M. Anhar Uddin; Meng, Lingyu; Zhao, Hongping; Goldhahn, Rüdiger; Feneberg, Martin
In: The 4th International Workshop on Gallium Oxide and Related Materials - The IWGO2022 Steering Committee, 2022 . - 2022, S. 232-233
Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Espinoza, Shirly; Zahradnik, Martin; Andreasson, Jakob; Deppe, Michael; As, Donat J.
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 5
Optical properties of the AlScN ternary system
Grümbel, Jona; Baron, Elias; Lüttich, Christopher; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Dadgar, Armin; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 263, Artikel AT 195
Remote heteroepitaxy of In(x)Ga(1-x)As on graphene covered GaAs(001) substrates
Henksmeier, Tobias; Schulz, Friedemann; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Reuter, Dirk
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Magnetic tilting in ferronematic hybrid materials driven by self assembly
Eremin, Alexey; Hähsler, Martin; Nadasi, Hajnalka; Feneberg, Martin; Marino, Sebastian; Giesselmann, Frank; Behrens, Silke
In: 28th International Liquid Crystal Conference, ILCC 2022 - Lisbon, 2022 . - 2022
Begutachteter Zeitschriftenartikel
Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates
Henksmeier, T.; Schulz, Johann Friedemann; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Sanchez, A. M.; Voigt, M.; Grundmeier, G.; Reuter, D.
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 593 (2022)
Small compound - big colors - synthesis and structural investigation of brightly colored alkaline earth metal 1,3-dimethylviolurates
Lorenz, Volker; Liebing, Phil; Müller, Matthias; Hilfert, Liane; Feneberg, Martin; Kluth, Elias; Kühling, Marcel; Buchner, Magnus Richard; Goldhahn, Rüdiger; Edelmann, Frank T.
In: Dalton transactions - London : Soc., Bd. 51 (2022), Heft 20, S. 7975-7985
Molecular beam epitaxy of single-crystalline bixbyite (In 1 xGax) 2O 3 films (x≤0.18) - structural properties and consequences of compositional inhomogeneity
Papadogianni, Alexandra; Wouters, Charlotte; Schewski, Robert; Feldl, Johannes; Lähnemann, Jonas; Nagata, Takahiro; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Ramsteiner, Manfred; Albrecht, Martin; Bierwagen, Oliver
In: Physical review materials - College Park, MD: APS, Bd. 6 (2021), 3, insges. 11 S., 2022
Delocalization of dark and bright excitons in flat-band materials and the optical properties of V 2O 5
Gorelov, Vitaly; Reining, Lucia; Feneberg, Martin; Goldhahn, Rüdiger; Schleife, André; Lambrecht, Walter R. L.; Gatti, Matteo
In: npj computational materials - London: Nature Publ. Group, Bd. 8 (2022), insges. 9 S.
Anharmonicity of lattice vibrations in thin film α-Ga 2O 3 investigated by temperature dependent Raman spectroscopy
Grümbel, Jona; Goldhahn, Rüdiger; Jeon, Dae-Woo; Feneberg, Martin
In: Applied physics letters - Melville, NY : American Inst. of Physics, Bd. 120 (2022), Heft 2, insges. 7 S.
Tackling disorder in γ-Ga 2O 3
Ratcliff, Laura E.; Oshima, Takayoshi; Nippert, Felix; Janzen, Benjamin M.; Kluth, Elias; Goldhahn, Rüdiger; Feneberg, Martin; Mazzolini, Piero; Bierwagen, Oliver; Wouters, Charlotte; Nofal, Musbah; Albrecht, Martin; Swallow, Jack E. N.; Jones, Leanne A. H.; Thakur, Pardeep K.; Lee, Tien-Lin; Kalha, Curran; Schlueter, Christoph; Veal, Tim D.; Wagner, Markus R.; Regoutz, Anna
In: Advanced materials - Weinheim: Wiley-VCH, Bd. 34 (2022), 37, insges. 15 S.
Optical properties of corundum-structured In 2O 3
Cuscó, Ramon; Yamaguchi, Tomohiro; Kluth, Elias; Goldhahn, Rüdiger; Feneberg, Martin
In: Applied physics letters - Melville, NY: American Inst. of Physics, Bd. 121 (2022), 6
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
Wu, Shaojun; Guttmann, Martin; Lobo-Ploch, Neysha; Gindele, Frank; Susilo, Norman; Knauer, Arne; Kolbe, Tim; Raß, Jens; Hagedorn, Sylvia; Cho, Hyun Kyong; Hilbrich, Katrin; Feneberg, Martin; Goldhahn, Rüdiger; Einfeldt, Sven; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
In: Semiconductor science and technology - Bristol: IOP Publ., Bd. 37 (2022), 6, insges. 6 S.
Nicht begutachteter Zeitschriftenartikel
Tackling disorder in γ-Ga2O3
Ratcliff, Laura E.; Oshima, Takayoshi; Nippert, Felix; Janzen, Benjamin M.; Kluth, Elias; Goldhahn, Rüdiger; Feneberg, Martin; Mazzolini, Piero; Bierwagen, Oliver; Wouters, Charlotte; Nofal, Musbah; Albrecht, Martin; Swallow, Jack E. N.; Jones, Leanne A. H.; Thakur, Pardeep K.; Lee, Tien-Lin; Kalha, Curran; Schlueter, Christoph; Veal, Tim D.; Varley, Joel B.; Wagner, Markus R.; Regoutz, Anna
In: De.arxiv.org - [S.l.]: Arxiv.org . - 2022, insges. 40 S.
Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
Baron, Elias; Goldhahn, Rüdiger; Espinoza, Shirly; Zahradník, Martin; Rebarz, Mateusz; Andreasson, Jakob; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: De.arxiv.org - [S.l.]: Arxiv.org . - 2022, insges. 11 S.
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Egbo, Kingsley; Luna, Esperanza; Lähnemann, Jonas; Hoffmann, Georg F.; Trampert, Achim; Grümbel, Jona; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Bierwagen, Oliver
In: De.arxiv.org - [S.l.] : Arxiv.org . - 2022, Artikel 2209.11678, insges. 23 S.
Delocalization of dark and bright excitons in flat-band materials and the optical properties of V 2O 5
Gorelov, Vitaly; Reining, Lucia; Feneberg, Martin; Goldhahn, Rüdiger; Schleife, André; Lambrecht, Walter R. L.; Gatti, Matteo
In: De.arxiv.org - [S.l.]: Arxiv.org . - 2022, insges. 14 S.
2021
Abstract
Free-carrier concentration and many-body effects in cubic Al xGa 1-xN
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Deppe, Michael; Tacken, Fabian; As, Donat J.
In: WSE 11 - Linz: Johannes Kepler University Linz, 2021 . - 2021, S. 12
Magnetic tilting in nematic liquid crystals driven by self-assembly
Hähsler, Martin; Nádasi, Hajnalka; Feneberg, Martin; Marino, Sebastian; Giesselmann, Frank; Behrens, Silke; Eremin, Alexey B.
In: Polarity and chirality in soft matter - Ljubljana, 2021; Vilfan, Mojca . - 2021, insges. 1 S.
Begutachteter Zeitschriftenartikel
Optical evidence of many-body effects in the zincblende AlxGa1-xN alloy system
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Deppe, Michael; Tacken, Fabian; As, Donat J.
In: Journal of physics / D - Bristol: IOP Publ., Volume 54 (2021), isuue 2, article 025101, 12 Seiten
Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) 2O 3 alloy films
Feldl, Johannes; Feneberg, Martin; Papadogianni, Alexandra; Lähnemann, Jonas; Nagata, Takahiro; Bierwagen, Oliver; Goldhahn, Rüdiger; Ramsteiner, Manfred
In: Applied physics letters - Melville, NY: American Inst. of Physics, Bd. 119 (2021), 4, insges. 6 S.
Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
Meier, F.; Protte, M.; Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Reuter, D.; As, D. J.
In: AIP Advances - New York, NY: American Inst. of Physics, Bd. 11 (2021), 7, insges. 7 S.
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Feneberg, Martin; Romero, Fátima; Goldhahn, Rüdiger; Wernicke, Tim; Reich, Christoph; Stellmach, Joachim; Mehnke, Frank; Knauer, Arne; Weyers, Markus; Kneissl, Michael
In: Applied physics letters - Melville, NY : American Inst. of Physics, Bd. 118 (2021), Heft 20, Artikel 202101, insges. 6 S.
Magnetic tilting in nematic liquid crystals driven by self-assembly
Hähsler, Martin; Nádasi, Hajnalka; Feneberg, Martin; Marino, Sebastian; Giesselmann, Frank; Behrens, Silke; Eremin, Alexey B.
In: Advanced functional materials - Weinheim: Wiley-VCH, Bd. 31 (2021), 31, insges. 7 S.
Nicht begutachteter Zeitschriftenartikel
Molecular beam epitaxy of single-crystalline bixbyite (In 1 xGa x) 2O 3 films (x≤0.18) - structural properties and consequences of compositional inhomogeneity
Papadogianni, Alexandra; Wouters, Charlotte; Schewski, Robert; Feldl, Johannes; Lähnemann, Jonas; Nagata, Takahiro; Kluth, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Ramsteiner, Manfred; Albrecht, Martin; Bierwagen, Oliver
In: De.arxiv.org - [S.l.]: Arxiv.org . - 2021, insges. 15 S.
Magnetic tilting in nematic liquid crystals driven by self-assembly
Hähsler, Martin; Nádasi, Hajnalka; Feneberg, Martin; Marino, Sebastian; Giesselmann, Frank; Behrens, Silke; Eremin, Alexey B.
In: De.arxiv.org - [S.l.]: Arxiv.org . - 2021, insges. 7 S.
Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga) 2O 3 alloy films
Feldl, Johannes; Feneberg, Martin; Papadogianni, Alexandra; Lähnemann, Jonas; Nagata, Takahiro; Bierwagen, Oliver; Goldhahn, Rüdiger; Ramsteiner, Manfred
In: De.arxiv.org - [S.l.] : Arxiv.org . - 2021, Artikel 2104.08092, insges. 11 S.
2020
Abstract
Raman-Spectroscopy of corundum-like α-Ga 2O 3 grown by HVPE
Grümbel, Jona; Ning, Pingfan; Bläsing, Jürgen; Jeon, Dae-Woo; Feneberg, Martin; Goldhahn, Rüdiger
In: DPG-Frühjahrstagung - Bad Honnef : DPG - 2020, Vortrag: HL 72.2
Phonons and free-carrier contributions of spinel ZnGa 2O 4 by spectroscopic ellipsometry
Wüthrich, Alwin; Feneberg, Martin; Galazka, Zbigniew; Goldhahn, Rüdiger
In: DPG-Frühjahrstagung - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 72.4
Size-effect of donors on the lattice parameters of wurtzite GaN
Kluth, Elias; Lange, Karsten; Wienecke, Matthias; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Goldhahn, Rüdiger; Feneberg, Martin
In: DPG-Frühjahrstagung - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.3
Impact of high free-carrier concentrations on optical properties of cubic GaN
Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: DPG-Frühjahrstagung - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.1
Begutachteter Zeitschriftenartikel
Polarization fields in semipolar (2021) and (2021) InGaN light emitting diodes
Freytag, Stefan; Winkler, Michael; Goldhahn, Rüdiger; Wernicke, Tim; Rychetsky, Monir; Koslow, Ingrid L.; Kneissl, Michael; Dinh, Duc V.; Corbett, Brian; Parbrook, Peter J.; Feneberg, Martin
In: Applied physics letters - Melville, NY : American Inst. of Physics - Volume 116(2020), Issue 6, Article 062106
The impurity size-effect and phonon deformation potentials in wurtzite GaN
Kluth, Elias; Wieneke, Matthias; Bläsing, Jürgen P.; Witte, Hartmut; Lange, Karsten; Dadgar, Armin; Goldhahn, Rüdiger; Feneberg, Martin
In: Semiconductor science and technology - Bristol: IOP Publ., Volume 35 (2020), issue 9, 9 Seiten
Lattice vibrations and optical properties of α-Ga 2O 3 films grown by halide vapor phase epitaxy
Ning, Pingfan; Grümbel, Jona; Bläsing, Jürgen; Goldhahn, Rüdiger; Jeon, Dae-Woo; Feneberg, Martin
In: Semiconductor science and technology - Bristol : IOP Publ. - Volume 35 (2020), issue 9, article 095001, 7 Seiten
Rubidium and cesium enediamide complexes derived from bulky 1,4-diazadienes
Duraisamy, Ramesh; Liebing, Phil; Harmgarth, Nicole; Lorenz, Volker; Hilfert, Liane; Feneberg, Martin; Goldhahn, Rüdiger; Engelhardt, Felix; Edelmann, Frank T.
In: ACS omega - Washington, DC: ACS Publications, Bd. 5 (2020), 30, S. 19061-19069
Dissertation
Optische Untersuchung von semipolaren InGaN/GaN-Quantengräben mit der Kristallorientierung (202̄1̄) und (202̄1)
Freytag, Stefan; Feneberg, Martin
In: Magdeburg, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2020, 114 Seiten [Literaturverzeichnis: Seite 101-113][Literaturverzeichnis: Seite 101-113]
2019
Abstract
Effective electron mass anisotropy in [alpha]-Ga 2O 3
Feneberg, Martin; Bläsing, Jürgen; Goldhahn, Rüdiger; Akaiwa, Kazuaki
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL9.2
All-optical determination of free-carrier concentration and composition in cubic GaN and AlGaN
Baron, Elias; Deppe, Michael; Tacken, Fabian; As, Donat J.; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL24.4
IR-Vis-UV optical properties of [alpha]-Ga 2O 3 films grown by halide vapor phase epitaxy
Ning, Pingfan; Feneberg, Martin; Bläsing, Jürgen; Son, Hoki; Jeon, Dae-Woo; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL16.12
Orbital contributions to the electron g-factor in semiconductor nanowires
Winkler, Michael; Brähmer, Hagen; Feneberg, Martin; Esser, Norbert; Monroy, Eva; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL31.6
Begutachteter Zeitschriftenartikel
Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×10 20cm -3
Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: Physical review materials - College Park, MD: APS, Volume 3 (2019), Issue 10, Article 104603, insgesamt 11 Seiten
Anisotropic optical properties of highly doped rutile SnO 2 - valence band contributions to the Burstein-Moss shift
Feneberg, Martin; Lidig, Christian; White, Mark E.; Tsai, Min Y.; Speck, James S.; Bierwagen, Oliver; Galazka, Zbigniew; Goldhahn, Rüdiger
In: APL materials - Melville, NY : AIP Publ. - Vol. 7.2019, 2, Art. 022508
Anisotropic phonon properties and effective electron mass in α-Ga 2O 3
Feneberg, Martin; Bläsing, Jürgen; Sekiyama, Takahito; Ota, Katsuya; Akaiwa, Kazuaki; Ichino, Kunio; Goldhahn, Rüdiger
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 114.2019, 4, Art. 142102, insgesamt 5 Seiten
Photoluminescence line shape analysis of highly ntype doped zincblende GaN
Baron, Elias; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.; Feneberg, Martin
In: Physica status solidi / B - Weinheim: Wiley-VCH . - 2019, insges. 5 S.
Catenated and spirocyclic polychalcogenides from potassium carbonate and elemental chalcogens
Liebing, Phil; Kühling, Marcel; Swanson, Claudia; Feneberg, Martin; Hilfert, Liane; Goldhahn, Rüdiger; Chivers, Tristram; Edelmann, Frank T.
In: Chemical communications - Cambridge: Soc., Bd. 55 (2019), 99, S. 14965-14967
2018
Abstract
Plasmonic properties of degenerately Ge-Doped Cubic GaN
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.
In: WSE 10: Workshop Ellipsometry, March 19 - 21, 2018, Chemnitz, Germany : abstract-book - Chemnitz, 2018 . - 2018, S. 36
Revision of the TO phonon frequencies in wurtzite and zincblende GaN
Feneberg, Martin; Baron, Elias; Kluth, Elias; Lange, Karsten; Donat, As; Deppe, Michael; Tacken, Fabian; Wieneke, Matthias; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Goldhahn, Rüdiger
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018
Structural, optical and electronic properties of single-crystalline (In1-xGax)2O3 thin films in the low-x bixbyite phase end
Papadogianni, Alexandra; Nagata, Takahiro; Wouters, Charlotte; Albrecht, Martin; Feldl, Johannes; Ramsteiner, Manfred; Feneberg, Martin; Goldhahn, Rüdiger; Bierwagen, Oliver
In: 7th International Symposium Transparent Conductive Materials, E-MRS & MRS-J Bilateral Symposium Advanced Oxides and Wide Bandgap Semiconductors: 14-19 October 2018, Crete, Greece ; Abstract book - TCM, 2018, 2018, TCM-O45.ID-10, S. 171
Optical properties of metastable polytypes of Ga2O3
Feneberg, Martin
In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018[Konferenz: Optoelectronics, Photonic Materials and Devices Conference, OPTO, San Francisco, USA, 27.01.-01.02. 2018]
Optical properties of transparent conducting oxides from mid-infrared to vacuum-ultraviolet
Feneberg, Martin
In: E-MRS 2018 Fall Meeting, Symposium R: New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing - eMSR, 2018, 2018, Art. R. 10.7[E-MRS 2018 fall meeting, Warsaw, 17 - 20 September 2018]
Influence of many-body effects on optical properties of III-Nitrides
Feneberg, Martin
In: Reliable and quantitative prediction of defect properties in Ga-based semiconductors: October 8-12, 2018 - CECAM, 2018 . - 2018
Characterization of the dielectric function of RScO3 type scandates
Kuznetsov, Sergey; Feneberg, Martin; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. DS 3.10
Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20eV
Winkler, Michael; Feneberg, Martin; Chichibu, Shigefusa F.; Collazo, Ramón; Sitar, Zlatko; Neumann, Maciej D.; Esser, Norbert; Goldhahn, Rüdiger
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.10
Begutachteter Zeitschriftenartikel
Ordinary dielectric function of corundumlike α Ga 2O 3 from 40 meV to 20 eV
Feneberg, Martin; Nixdorf, Jakob; Neumann, Maciej D.; Esser, Norbert; Artús, Lluis; Cuscó, Ramon; Yamaguchi, Tomohiro; Goldhahn, Rüdiger
In: Physical review materials - College Park, MD : APS - Vol. 2.2018, 4, Art. 044601
Anisotropic optical properties of metastable (0112)α Ga2O3 grown by plasma-assisted molecular beam epitaxy
Kracht, M.; Karg, A.; Feneberg, Martin; Bläsing, Jürgen; Schörmann, J.; Goldhahn, Rüdiger; Eickhoff, M.
In: Physical review applied - College Park, Md. [u.a.] : American Physical Society - Vol. 10.2018, 2, Art. 024047
Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
Feneberg, Martin; Winkler, Michael; Lange, Karsten; Wieneke, Matthias; Witte, Hartmut; Dadgar, Armin; Goldhahn, Rüdiger
In: Applied physics express: APEX - Tokyo: Ōyō Butsuri-Gakkai, Vol. 11.2018, 10, Art. 101001
Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
Budde, Melanie; Tschammer, Carsten; Franz, Philipp; Feldl, Johannes; Ramsteiner, Manfred; Goldhahn, Rüdiger; Feneberg, Martin; Barsan, Nicolae; Oprea, Alexandru; Bierwagen, Oliver
In: Journal of applied physics - Melville, NY : American Inst. of Physics - Vol. 123.2018, 19, Art. 195301, insgesamt 19 S.
Optical properties of In 2O 3 from experiment and first-principles theory - influence of lattice screening
Schleife, André; Neumann, Maciej D.; Esser, Norbert; Galazka, Zbigniew; Gottwald, Alexander; Nixdorf, Jakob; Goldhahn, Rüdiger; Feneberg, Martin
In: New journal of physics - [Bad Honnef] : Dt. Physikalische Ges. - Vol. 20.2018, Art. 053016, insgesamt 13 S.
2017
Abstract
Effective electron mass in cubic GaN
Baron, Elias; Feneberg, Martin; Goldhahn, Rüdiger; Deppe, Michael; As, Donat J.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2017, Artikel HL 50.2
Begutachteter Zeitschriftenartikel
Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate
Wunderer, Thomas; Yang, Zhihong; Feneberg, Martin; Batres, Max; Teepe, Mark; Johnson, Noble
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 11.2017, 11, Art. 111101
Band gap of corundumlike α-Ga 2O 3 determined by absorption and ellipsometry determined by absorption and ellipsometry
Segura, A.; Artús, L.; Cuscó, R.; Goldhahn, Rüdiger; Feneberg, Martin
In: Physical review materials - College Park, MD: APS, Vol. 1.2017, 2, Art. 024604
2016
Begutachteter Zeitschriftenartikel
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
Tabataba-Vakili, Farsane; Wunderer, Thomas; Kneissl, Michael; Yang, Zhihong; Teepe, Mark; Batres, Max; Feneberg, Martin; Vancil, Bernard; Johnson, Noble M.
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 109.2016, 18, Art. 181105
Erratum: Many-electron effects on the dielectric function of cubic In 2O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
Feneberg, Martin; Nixdorf, Jakob; Lidig, Christian; Goldhahn, Rüdiger; Galazka, Zbigniew; Bierwagen, Oliver; Speck, James S.
In: Physical review - Woodbury, NY: Inst., Vol. 93.2016, 23, Art. 239905
Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
Minj, A.; Romero, M. F.; Wang, Y.; Tuna, Ö.; Feneberg, Martin; Goldhahn, Rüdiger; Schmerber, G.; Ruterana, P.; Giesen, C.; Heuken, M.
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 109.2016, 22, Art. 221106
Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods
Xie, Yong; Madel, Manfred; Feneberg, Martin; Neuschl, Benjamin; Jie, Wanqi; Hao, Yue; Ma, Xiaohua; Thonke, Klaus
In: Materials Research Express : MRX. - Bristol : IOP Publ; Vol. 3.2016, 4, Art. 045011, insgesamt 7 S.
Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3 - theory and experiment
Demchenko, D. O.; Izyumskaya, N.; Feneberg, Martin; Avrutin, V.; Özgür, Ü.; Goldhahn, Rüdiger; Morkoç, H.
In: Physical review - Woodbury, NY: Inst., Bd. 94 (2016), 7
Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
Freytag, Stefan; Feneberg, Martin; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Callsen, Gordon; Hoffmann, Axel; Bokov, Pavel; Goldhahn, Rüdiger
In: Journal of applied physics - Melville, NY: American Inst. of Physics, Vol. 120.2016, 1, Art. 015703
Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
Neumann, M. D.; Esser, N.; Chauveau, J.-M.; Goldhahn, Rüdiger; Feneberg, Martin
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 108.2016, 22, Art. 221105, insgesamt 6 S.
Many-electron effects on the dielectric function of cubic In 2 O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
Feneberg, Martin; Nixdorf, Jakob; Lidig, Christian; Goldhahn, Rüdiger; Galazka, Zbigniew; Bierwagen, Oliver; Speck, James S.
In: Physical review - Woodbury, NY: Inst., Bd. 93 (2016), 4
2015
Buchbeitrag
Optical properties and band structure of highly doped gallium nitride
Goldhahn, Rüdiger; Lange, Karsten; Feneberg, Martin
In: Proceedings of SPIE/ SPIE - Bellingham, Wash.: SPIE, Vol. 9363.2015, Art. 93630G
Begutachteter Zeitschriftenartikel
Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
Bokov, P. Yu.; Brazzini, T.; Romero, M. F.; Calle, F.; Feneberg, Martin; Goldhahn, Rüdiger
In: Semiconductor science and technology: devoted exclusively to semiconductor research and applications - Bristol: IOP Publ, Vol. 30.2015, 8, Art. 085014, insgesamt 6 S.
Electrical transport properties of Ge-doped GaN nanowires
Schäfer, M.; Günther, M.; Länger, C.; Müßener, J.; Feneberg, Martin; Uredat, P.; Elm, M. T.; Hille, P.; Schörmann, J.; Teubert, J.; Henning, T.; Klar, P. J.; Eickhoff, M.
In: Nanotechnology - Bristol: IOP Publ, Vol. 26.2015, 13, Art. 135704, insgesamt 9 S.
Optical properties of defects in nitride semiconductors
Tischer, Ingo; Hocker, Matthias; Neuschl, Benjamin; Madel, Manfred; Feneberg, Martin; Schirra, Martin; Frey, Manuel; Knab, Manuel; Maier, Pascal; Wunderer, Thomas; Leute, Robert A. R.; Wang, Junjun; Scholz, Ferdinand; Biskupek, Johannes; Bernhard, Jörg; Kaiser, Ute; Simon, Ulrich; Dieterle, Levin; Groiss, Heiko; Müller, Erich; Gerthsen, Dagmar; Thonke, Klaus
In: Journal of materials research: JMR - Warrendale, Pa: MRS, insges. 14 S., 2015
Zeeman spectroscopy of the internal transition 4 T 1 to 6 A 1 of Fe 3+ ions in wurtzite GaN
Neuschl, Benjamin; Gödecke, Laura; Thonke, Klaus; Lipski, Frank; Klein, Martin; Scholz, Ferdinand; Feneberg, Martin
In: Journal of applied physics: AIP's archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 118.2015, 21, Art. 215705, insgesamt 11 S.
Exciton luminescence in AlN triggered by hydrogen and thermal annealing
Feneberg, Martin; Son, Nguyen Tien; Kakanakova-Georgieva, Anelia
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, Art. 242101, insgesamt 5 S.
Structural and optical properties of MBE-grown asymmetric cubic GaN/Al x Ga 1- x N double quantum wells
Wecker, T.; Hörich, Florian; Feneberg, Martin; Goldhahn, Rüdiger; Reuter, D.; As, D. J.
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 873-878
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
Reich, Christoph; Guttmann, Martin; Feneberg, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Rass, Jens; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus; Goldhahn, Rüdiger; Kneissl, Michael
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 14, Art. 142101, insgesamt 6 S.
Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
Feneberg, Martin; Winkler, Michael; Klamser, Juliane; Stellmach, Joachim; Frentrup, Martin; Ploch, Simon; Mehnke, Frank; Wernicke, Tim; Kneissl, Michael; Goldhahn, Rüdiger
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, 18, Art. 182102, insgesamt 5 S.
Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN
Gridneva, E.; Richter, E.; Feneberg, Martin; Weyers, M.; Goldhahn, Rüdiger; Tränkle, G.
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 1180-1188
2014
Begutachteter Zeitschriftenartikel
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
Feneberg, Martin; Osterburg, Sarah; Lange, Karsten; Lidig, Christian; Garke, Bernd; Goldhahn, Rüdiger; Richter, Eberhard; Netzel, Carsten; Neumann, Maciej D.; Esser, Norbert; Fritze, Stephanie; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 90.2014, 7, Art. 075203, insgesamt 10 S.
Nanoscale characterisation of semiconductors by cathodoluminescence
Thonke, K.; Tischer, I.; Hocker, M.; Schirra, M.; Fujan, K.; Wiedenmann, M.; Schneider, R.; Frey, M.; Feneberg, Martin
In: IOP conference series. - London [u.a.] : Institute of PhysicsIOP conference series / Materials science and engineering; Vol. 55.2014, Art. 012018, insgesamt 21 S.
Composition dependent valence band order in c-oriented wurtzite AlGaN layers
Neuschl, B.; Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K.; Meisch, T.; Forghani, K.; Scholz, F.; Feneberg, Martin
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 116.2014, 11, Art. 113506, insgesamt 9 S.
Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry
Feneberg, Martin; Lidig, Christian; Lange, Karsten; White, Mark E.; Tsai, Min Y.; Speck, James S.; Bierwagen, Oliver; Goldhahn, Rüdiger
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, Bd. 211.2014, 1, S. 82-86
Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
Feneberg, Martin; Romero, María Fátima; Neuschl, Benjamin; Thonke, Klaus; Röppischer, Marcus; Cobet, Christoph; Esser, Norbert; Bickermann, Matthias; Goldhahn, Rüdiger
In: Thin solid films: international journal on the science and technology of condensed matter films - Amsterdam [u.a.]: Elsevier, 1967, Vol. 571.2014, part 3, S. 502-595
Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers
Netzel, Carsten; Stellmach, Joachim; Feneberg, Martin; Frentrup, Martin; Winkler, Michael; Mehnke, Frank; Wernicke, Tim; Goldhahn, Rüdiger; Kneissl, Michael; Weyers, Markus
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 104.2014, 5, Art. 051906
Optical properties of magnesium doped Al x Ga1 x N (0.61 ≤ x ≤ 0.73)
Feneberg, Martin; Osterburg, Sarah; Romero, María Fátima; Garke, Bernd; Goldhahn, Rüdiger; Neumann, Maciej D.; Esser, Norbert; Yan, Jianchang; Zeng, Jianping; Wang, Junxi; Li, Jinmin
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 114.2014, Art. 143103, insgesamt 8 S.
Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
Feneberg, Martin; Lidig, Christian; Lange, Karsten; Goldhahn, Rüdiger; Neumann, Maciej D.; Esser, Norbert; Bierwagen, Oliver; White, Mark E.; Tsai, Min Y.; Speck, James S.
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 104.2014, Art. 231106, insgesamt 5 S.
2013
Begutachteter Zeitschriftenartikel
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
Neuschl, B.; Thonke, K.; Feneberg, Martin; Goldhahn, Rüdiger; Wunderer, T.; Yang, Z.; Johnson, N. M.; Xie, J.; Mita, S.; Rice, A.; Collazo, R.; Sitar, Z.
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 12, Art. 122105, insgesamt 5 S.
Anisotropy of effective electron masses in highly doped nonpolar GaN
Feneberg, Martin; Lange, Karsten; Lidig, Christian; Wieneke, Matthias; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Goldhahn, Rüdiger
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 23, Art. 232104, insgesamt 5 S.
Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
Reich, Christoph; Feneberg, Martin; Kueller, Viola; Knauer, Arne; Wernicke, Tim; Schlegel, Jessica; Frentrup, Martin; Goldhahn, Rüdiger; Weyers, Markus; Kneissl, Michael
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 21, Art. 212108, insgesamt 5 S.
Anisotropic absorption and emission of bulk (1-100) AlN
Feneberg, Martin; Romero, María Fátima; Röppischer, Marcus; Cobet, Christoph; Esser, Norbert; Neuschl, Benjamin; Thonke, Klaus; Bickermann, Matthias; Goldhahn, Rüdiger
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 87.2012, 23, Art. 235209, insgesamt 9 S., 2013
Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10 20 cm -3
Wieneke, Matthias; Witte, Hartmut; Lange, Karsten; Feneberg, Martin; Dadgar, Armin; Bläsing, Jürgen; Goldhahn, Rüdiger; Krost, Alois
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art. 012103, insgesamt 4 S.
Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer
Scholz, Ferdinand; Forghani, Kamran; Klein, Martin; Klein, Oliver; Kaiser, Ute; Neuschl, Benjamin; Tischer, Ingo; Feneberg, Martin; Thonke, Klaus; Lazarev, Sergey; Bauer, Sondes; Baumbach, Tilo
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08JJ07, insgesamt 4 S.
Impact of AlN Spacer on metalsemiconductormetal PtInAlGaN/GaN heterostructures for ultraviolet detection
Brazzini, Tommaso; Pandrey, Saurabh; Romero, María Fátima; Bokov, Pavel Yu.; Feneberg, Martin; Tabares, Gema; Cavallini, Anna; Goldhahn, Rüdiger; Calle, Fernando
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08jk04, insgesamt 4 S.
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
Romero, María Fátima; Feneberg, Martin; Moser, Pascal; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Sakalauskas, Egidijus; Calle, Fernando; Goldhahn, Rüdiger
In: Japanese journal of applied physics - Bristol: IOP Publ, Vol. 52.2013, Art. 08jk02, insgesamt 4 S.
Negative spin-exchange splitting in the exciton fine structure of AlN
Feneberg, Martin; Romero, María Fátima; Neuschl, Benjamin; Thonke, Klaus; Röppischer, Marcus; Cobet, Christoph; Esser, Norbert; Bickermann, Matthias; Goldhahn, Rüdiger
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 102.2013, 5, Art. 052112, insgesamt 4 S.
Transition energies and direct-indirect band gap crossing in zinc-blende Al_{x}Ga_{1 x}N
Landmann, M.; Rauls, E.; Schmidt, W. G.; Röppischer, Marcus; Cobet, Christoph; Esser, Norbert; Schupp, Thorsten; As, Donat J.; Feneberg, Martin; Goldhahn, Rüdiger
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 87.2013, 19, Art. 195210, insgesamt 21 S.
Habilitation
Hochauflösende Emissions- und Absorptionsspektroskopie an Halbleitern mit großer Bandlücke
Feneberg, Martin; Goldhahn, Rüdiger
In: Magdeburg, Univ., Fak. für Naturwiss., Habil.-Schr., 2013, II, 49 S., graph. Darst., 30 cm
2012
Begutachteter Zeitschriftenartikel
Silicon-on-insulator based ZnO nanowire photodetector
Xie, Yong; Madel, Manfred; Neuschl, Benjamin; Jie, Wanqi; Röder, Uwe; Feneberg, Martin; Thonke, Klaus
In: Journal of vacuum science & technology. - New York, NY : InstJournal of vacuum science & technology / B, Bd. 30.2012, 6, insges. 5 S.
Growth-induced stacking faults of ZnO nanorods probed by spatial resolved cathodoluminescence
Xie, Yong; Jie, Wan-Qi; Wang, Tao; Wiedenmann, Michael; Neuschl, Benjamin; Madel, Manfred; Wang, Ya-Bin; Feneberg, Martin; Thonke, Klaus
In: Chinese physics letters. - Bristol : IOP Publ, Bd. 29.2012, 7, insges. 5 S.
Originalartikel in begutachteter internationaler Zeitschrift
Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
Romero, Maria Fatima; Feneberg, Martin; Moser, Pascal; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Sakalauskas, E.; Goldhahn, Rüdiger
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.
Optical properties of cubic GaN from 1 to 20 eV
Feneberg, Martin; Röppischer, Marcus; Cobet, Christoph; Esser, Norbert; Schörmann, Jörg; Schupp, Thorsten; As, Donat J.; Hörich, Florian; Bläsing, Jürgen; Krost, Alois; Goldhahn, Rüdiger
In: Physical review / B - College Park, Md.: APS, 85.2012, 15, Art. 155207, insgesamt 7 S.
Growth of AlN bulk crystals on SiC seeds - chemical analysis and crystal properties
Bickermann, Matthias; Filip, Octavian; Epelbaum, Boris M.; Heimann, Paul; Feneberg, Martin; Neuschl, Benjamin; Thonke, Klaus; Wedler, Elke; Winnacker, Albrecht
In: Journal of crystal growth. - Amsterdam : North-Holland Publ. Co, Bd. 339.2012, 1, S. 13-21
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
Neuschl, Benjamin; Thonke, Klaus; Feneberg, Martin; Mita, Seiji; Xie, Jinqiao; Dalmau, Rafael; Collazo, Ramón; Sitar, Zlatko
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, Bd. 249.2012, 3, S. 511-515
Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
Xie, Yong; Madel, Manfred; Zoberbier, Thilo; Reiser, Anton; Jie, Wanqi; Neuschl, Benjamin; Biskupek, Johannes; Kaiser, Ute; Feneberg, Martin; Thonke, Klaus
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 18, insges. 4 S.
Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers
Xie, Yong; Jie, Wanqi; Reiser, Anton; Feneberg, Martin; Tischer, Ingo; Wiedenmann, Michael; Madel, Manfred; Frey, Reinhard; Roeder, Uwe; Thonke, Klaus
In: Materials letters. - New York, NY [u.a.] : Elsevier, Bd. 83.2012, S. 31-34
2011
Buchbeitrag
Photoluminescence of ZnO - basics and applications
Thonke, Klaus; Feneberg, Martin
In: Handbook of luminescent semiconductor materials - Boca Raton, Fla: CRC Press/Taylor & Francis, S. 87-124, 2011
Originalartikel in begutachteter internationaler Zeitschrift
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Rossbach, Georg; Feneberg, Martin; Röppischer, Marcus; Werner, Christoph; Esser, Norbert; Cobet, Christoph; Meisch, Tobias; Thonke, Klaus; Dadgar, Armin; Bläsing, Jürgen; Krost, Alois; Goldhahn, Rüdiger
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.
Catalytic growth of hexagonally aligned ZnO nanorods
Madel, Manfred; Xie, Yong; Tischer, Ingo; Neuschl, Benjamin; Feneberg, Martin; Frey, Reinhard; Thonke, Klaus
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 8, S. 1915-1918
Molecular beam epitaxy based growth of cubic GaN quantum dots
Schupp, Thorsten; Meisch, Tobias; Neuschl, Benjamin; Feneberg, Martin; Thonke, Klaus; Lischka, Klaus; As, Donat Josef
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1495-1498
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal Substrates
Dalmau, R.; Moody, B.; Schlesser, R.; Mita, S.; Xie, J.; Feneberg, Martin; Neuschl, B.; Thonke, K.; Collazo, R.; Rice, A.; Tweedie, J.; Sitar, Z.
In: Journal of the Electrochemical Society - Pennington, NJ: Electrochemical Society, 158.2011, 5, S. H530-H535
Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al 0.94Ga 0.06N
Feneberg, Martin; Röppischer, Marcus; Esser, Norbert; Cobet, Christoph; Neuschl, Benjamin; Meisch, Tobias; Thonke, Klaus; Goldhahn, Rüdiger
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021903, insgesamt 3 S.
Sharp bound and free exciton lines from homoepitaxial AlN
Feneberg, Martin; Neuschl, Benjamin; Thonke, Klaus; Collazo, Ramón; Rice, Anthony; Sitar, Zlatko; Dalmau, Rafael; Xie, Jinqiao; Mita, Seiji; Goldhahn, Rüdiger
In: Physica status solidi / A: pss - Berlin: Wiley-VCH, Bd. 208.2011, 7, S. 1520-1522
Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
Kunert, G.; Freund, W.; Aschenbrenner, T.; Kruse, C.; Figge, S.; Schowalter, M.; Rosenauer, A.; Kalden, J.; Sebald, K.; Gutowski, J.; Feneberg, Martin; Tischer, I.; Fujan, K.; Thonke, K.; Hommel, D.
In: Nanotechnology - Bristol: IOP Publishing Ltd., 22.2011, 26, Art. 265202, insgesamt 6 S.
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Rossbach, Georg; Feneberg, Martin; Röppischer, Marcus; Werner, Christoph; Esser, Norbert; Cobet, Christoph; Meisch, Tobias; Thonke, Klaus; Dadgar, Armin; Bläsing, Jürgen; Krost, Alois; Goldhahn, Rüdiger
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.
Stacking fault-related luminescence features in semi-polar GaN
Tischer, Ingo; Feneberg, Martin; Schirra, Martin; Yacoub, Hady; Sauer, Rolf; Thonke1, Klaus; Wunderer, Thomas; Scholz, Ferdinand; Dieterle, Levin; Müller, Erich; Gerthsen, Dagmar
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 611-615
I 2 basal plane stacking fault in GaN - origin of the 3.32 eV luminescence band
Tischer, Ingo; Feneberg, Martin; Schirra, Martin; Yacoub, Hady; Sauer, Rolf; Thonke, Klaus; Wunderer, Thomas; Scholz, Ferdinand; Dieterle, Levin; Müller, Erich; Gerthsen, Dagmar
In: Physical review / B - Ridge, NY: APS, Bd. 83.2011, 3, S. 035314-1-035314-6
Optical properties of MgZnO alloys - excitons and exciton-phonon complexes
Neumann, M. D.; Cobet, C.; Esser, N.; Laumer, B.; Wassner, T. A.; Eickhoff, M.; Feneberg, Martin; Goldhahn, Rüdiger
In: Journal of applied physics - Melville, NY: AIP, 110.2011, 1, Art. 013520, insgesamt 8 S.
In-situ deposited SiNx nanomask for crystal quality improvement in AlGaN
Forghani, Kamran; Gharavipour, Mohammadreza; Klein, Martin; Scholz, Ferdinand; Klein, Oliver; Kaiser, Ute; Feneberg, Martin; Neuschl, Benjamin; Thonke, Klaus
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 7/8, S. 2063-2065
Zinc-blende GaN quantum dots grown by vaporliquidsolid condensation
Schupp, T.; Meisch, T.; Neuschl, B.; Feneberg, Martin; Thonke, K.; Lischka, K.; As, D. J.
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 323.2011, 1, S. 286-289
Three-dimensional GaN for semipolar light emitters
Wunderer, T.; Feneberg, Martin; Lipski, F.; Wang, J.; Leute, R. A. R.; Schwaiger, S.; Thonke, K.; Chuvilin, A.; Kaiser, U.; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Beirne, G. J.; Jetter, M.; Michler, P.; Schade, L.; Vierheilig, C.; Schwarz, U. T.; Dräger, A. D.; Hangleiter, A.; Scholz, F.
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 549-560
2010
Buchbeitrag
Transparent microelectrode array in diamond technology
Gao, Z.; Carabelli, V.; Carbone, E.; Colombo, E.; Dipalo, M.; Manfredotti, C.; Pasquarelli, A.; Feneberg, Martin; Thonke, K.; Vittone, E.; Kohn, E.
In: 2009 IEEE International Conference on Nano/Molecular Medicine and Engineering . - IEEE, ISBN 978-1-424-45528-7, S. 282-285; AbstractKongress: NanoMed; (Tainan) : 2009.10.18-21
Originalartikel in begutachteter internationaler Zeitschrift
The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
Thonke, Klaus; Schirra, Martin; Schneider, Raoul; Reiser, Anton; Prinz, Günther M.; Feneberg, Martin; Sauer, Rolf; Biskupek, Johannes; Kaiser, Ute
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 247.2010, 6, S. 1464-1468
Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers
Neuschl, B.; Fujan, K. J.; Feneberg, Martin; Tischer, I.; Thonke, K.; Forghani, K.; Klein, M.; Scholz, F.
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 19, S. 192108-1-192108-3
Three-dimensional GaN for semipolar light emitters
Wunderer, Thomas; Feneberg, Martin; Lipski, Frank; Wang, Junjun; Leute, Robert; Schwaiger, Stephan; Thonke, Klaus; Chuvilin, Andrei; Kaiser, Ute; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Beirne, Gareth; Jetter, Michael; Michler, Peter; Schade, Lukas; Vierheilig, Clemens; Schwarz, Ulrich; Dräger, Alexander; Hangleiter, Andreas; Scholz, Ferdinand
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, insges. 12 S., 2010
High quality AlGaN epilayers grown on sapphire using SiN x interlayers
Forghani, K.; Klein, M.; Lipski, F.; Schwaiger, S.; Hertkorn, J.; Leute, R. A. R.; Scholz, F.; Feneberg, Martin; Neuschl, B.; Thonke, K.; Klein, O.; Kaiser, U.; Gutt, R.; Passow, T.
In: Journal of crystal growth . - Amsterdam [u.a.] : Elsevier; Abstract
Light emission from nanocrystalline silicon clusters embedded in silicon dioxide - role of the suboxide states
Romanyuk, Andriy; Melnik, Viktor; Olikh, Yaroslav; Biskupek, Johannes; Kaiser, Ute; Feneberg, Martin; Thonke, Klaus; Oelhafen, Peter
In: Journal of luminescence . - Amsterdam : North-Holland Publ. Co., Bd. 130.2010, 1, S. 87-91
Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
Fujan, Kim J.; Feneberg, Martin; Neuschl, Benjamin; Meisch, T.; Tischer, Ingo; Thonke, Klaus; Schwaiger, Stephan; Izadi, Ida; Scholz, Ferdinand; Lechner, Lorenz; Biskupek, Johannes; Kaiser, Ute
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 10, insges. 3 S.
Droplet epitaxy of zinc-blende GaN quantum dots
Schupp, Thorsten; Meisch, Tobias; Neuschl, Benjamin; Feneberg, Martin; Thonke, Klaus; Lischka, Klaus; As, Donat J.
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 312.2010, 21, S. 3235-3237
High-excitation and high-resolution photoluminescence spectra of bulk AlN
Feneberg, Martin; Leute, Robert A. R.; Neuschl, Benjamin; Thonke, Klaus; Bickermann, Matthias
In: Physical review . - Ridge, NY : APS, Bd. 82.2010, 7, insges. 8 S.
Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
Feneberg, Martin; Thonke, Klaus; Wunderer, Thomas; Lipski, Frank; Scholz, Ferdinand
In: Journal of applied physics . - Melville, NY : AIP, Bd. 107.2010, 10, insges. 6 S.
Deep-UV transparent bulk single-crystalline AlN substrates
Bickermann, Matthias; Epelbaum, Boris M.; Filip, Octavian; Heimann, Paul; Feneberg, Martin; Nagata, Shunro; Winnacker, Albrecht
In: Physica status solidi . - Berlin : Wiley-VCH, Abstract
GaInN-based LED structures on selectively grown semi-polar crystal facets
Scholz, Ferdinand; Wunderer, Thomas; Feneberg, Martin; Thonke, Klaus; Chuvilin, Andrei; Kaiser, Ute; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, 2010
Quaternary Al xIn yGa 1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission
Jetter, M.; Wächter, C.; Meyer, A.; Feneberg, Martin; Thonke, K.; Michler, P.
In: Journal of crystal growth . - Amsterdam [u.a.] : Elsevier, insges. 4 S.; Abstract
Originalartikel in begutachteter zeitschriftenartiger Reihe
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
Dalmau, Rafael; Moody, Baxter; Schlesser, Raoul; Mita, Seiji; Xie, Jinqiao; Feneberg, Martin; Neuschl, Benjamin; Thonke, Klaus; Collazo, Ramón; Rice, Anthony; Tweedie, James; Sitar, Zlatko
In: State-of-the-art program on compound semiconductors 52 (SOTAPOCS 52) . - Pennington, NJ : Electrochemical Soc., ISBN 978-1-607-68182-3, S. 43-54; ECS transactions; 33,13Kongress: SOTAPOCS; 52 (Las Vegas) : 2010.10.10-15
Growth of cubic GaN quantum dots
Schupp, T.; Meisch, T.; Neuschl, B.; Feneberg, Martin; Thonke, K.; Lischka, K.; As, D.
In: 2010 wide bandgap cubic semiconductors: from growth to devices. - Melville, NY : American Inst. of Physics, S. 165-168 - (AIP conference proceedings; 1292)Kongress: E-MRS Symposium F; (Strasbourg) : 2010.06.08-10
2006
Originalartikel in begutachteter internationaler Zeitschrift
Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
Neubert, B.; Habel, F.; Brückner, P.; Scholz, F.; Schirra, M.; Feneberg, M.; Thonke, K.; Riemann, Till; Christen, Jürgen; Beer, M.; Zweck, J.; Moutchnik, G.; Jetter, M.
In: Physica status solidi / C - Berlin: Wiley-VCH, Bd. 3 (2006), 6, S. 1587-1590
Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
Neubert, B.; Habel, F.; Brückner, P.; Scholz, F.; Schirra, M.; Feneberg, M.; Thonke, K.; Riemann, Till; Christen, Jürgen; Beer, M.; Zweck, J.; Moutchnik, G.; Jetter, M.
In: Physica status solidi / C - Berlin: Wiley-VCH, Bd. 3 (2006), 6, S. 1587-1590
