Publications

2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | before 2010

List of publications of the Department of Material Physics since 2010. Most publications are directly linked to the publisher's website. If you have trouble finding a publication, please contact us directly!

2024

E. Kluth, Y. Nagashima, S. Osawa, Y. Hirose, J. Bläsing, A. Strittmatter, R. Goldhahn, and M. Feneberg
Blue shift of the absorption onset and bandgap bowing in rutile Ge_xSn_1-xO₂
Appl. Phys. Lett. 125, 122102 (2024).
E. Basurto, P. Gurin, E.Specht, and G. Odriozola
Searching for the maximal packing fraction of hard disks confined by a circular cavity through replica exchange/event-chain Monte Carlo
J. Chem. Phys. 161, 044110 (2024).
J. Grümbel, R. Goldhahn, M. Feneberg, Y. Oshima, A. Dubroka, and M. Ramsteiner
Band gaps and phonons of quasi-bulk rocksalt ScN
Phys. Rev. Materials 8, L071601 (2024).
A. Murad, E. Baron, M. Feneberg, M. Baumann, M. Lehmann, and A. Eremin
Polarity in liquid crystals formed self-assembled umbrella-shaped subphthalocyanine mesogens
ACS Applied Materials & Interfaces 16, 25025 (2024).
V. Gorelov, L. Reining, M. Feneberg, R. Goldhahn, A. Schleife, W.R.L. Lambrecht, and M. Gatti

Author Correction: Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅npj Comput. Mater. 10, 85 (2024).
A. Mudzakir, P. Liebing, E. Haak, A. Fischer, L. Hilfert, R. Goldhahn, and F.T. Edelmann
An unusual phosphide addition reaction of 1,3-dimethyl-1,2,3-benzotriazolium iodide
Inorg. Chem. Comm. 161, 111924 (2024).

2023

R. Johnson, P. Liebing, D. P. Musikanth, S. A. Regitz, D. S. Amenta, R. Goldhahn, F. T. Edelmann, and J. W. Gilje
Pyrazolylpropanoate Complexes of Palladium(II) Chloride
Z. Anorg. Allg. Chem. 649, e202300076 (2023).
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradik, M. Rebarz, J. Andreasson, M. Deppe. D.J. As, and M. Feneberg
Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN II: Absorption edge shift with gain and temperature effects
J. Appl. Phys. 134, 075703 (2023).
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradik, M. Rebarz, J. Andreasson, M. Deppe. D.J. As, and M. Feneberg
Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN I: Determination of the dielectric function
J. Appl. Phys. 134, 075702 (2023).
N. Harmgarth, P. Liebing, V. Lorenz, F. Engelhardt, L. Hilfert, S. Busse, R. Goldhahn, and F.T. Edelmann
Synthesis and Structural Characterization of p-Carboranylamidine Derivatives
Molecules. 28, 3837 (2023).
E. Kluth, A F M Anhar Uddin Bhuiyan, L. Meng, J. Bläsing, H. Zhao, A. Strittmatter, R. Goldhahn, and M. Feneberg
Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al_xGa_1-x)₂O₃ alloys
Japan. J. Appl. Phys. 62, 051001 (2023).
S. Wang, P. Liebing, M. Feneberg, F.M. Sroor, F. Engelhardt, L. Hilfert, S. Busse, E. Kluth, R. Goldhahn, and F.T. Edelmann
Synthesis and Structural Characterization of Divalent Transition Metal Alkynylamidinate Complexes
Eur. J. Inorg. Chem. 26, e202300027 (2023).
E. Kluth, M.W. Fay, C. Parmenter, J.W. Roberts, E. Smith, C.T. Stoppiello, F.C.-P. Massabuau, R. Goldhahn, and M. Feneberg
Redshift and amplitude increase in the dielectric function of corundum-like α-(Ti_xGa_1−x)₂O₃
Appl. Phys. Lett. 122, 092101 (2023).
K. Egbo, E. Luna, J. Lähnemann, G. Hoffmann, A. Trampert, J. Grümbel, E. Kluth, M. Feneberg, R. Goldhahn, and O. Bierwagen
Epitaxial synthesis of unintentionally-doped p-type SnO (001) via suboxide molecular beam epitaxy
J. Appl. Phys. 133, 045701 (2023).
S. Wang, P. Liebing, F. Engelhardt, L. Hilfert, S. Busse, R. Goldhahn, and F. T. Edelmann
Synthesis and Complexation Study of New Aminoalkynylamidinate Ligands
Z. Anorg. Angew. Chemie 649(1), e202200289 (2023).

2022

R. Cusco, T. Yamaguchi, E. Kluth, R. Goldhahn, and M. Feneberg
Optical properties of corundum-structured In2O3
Appl. Phys. Lett. 121, 062106 (2022).
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, and M. Feneberg
Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
submitted, cond-mat arxiv:2206.02223 (2022).
L.E. Ratcliff, T. Oshima, F. Nippert, B.M. Janzen, E. Kluth, R. Goldhahn, M. Feneberg, P. Mazzolini, O. Bierwagen, C. Wouters, M. Nofal, M. Albrecht, J.E.N. Swallow, L.A.H. Jones, P.K. Thakur, T.-L. Lee, C. Kalha, C. Schlueter, T.D. Veal, J.B. Varley, M.R. Wagner, and A. Regoutz
Tackling Disorder in γ-Ga₂O₃
Adv. Mater. 34, 2204217 (2022).
V. Lorenz, P. Lebing, M. Müller, L. Hilfert, M. Feneberg, E. Kluth, M. Kühling, M.R. Buchner, R. Goldhahn, and F.T. Edelmann
Small Compound - Big Colors: Synthesis and Structural Investigation of Brightly Colored Alkaline Earth Metal 1,3-Dimethylviolurates
Dalton Trans. 51, 7975 (2022).
S. Wu, M. Guttmann, N. Lobo-Ploch, F. Gindele, N. Susilo, A. Knauer, T. Kolbe, J. Raß, S. Hagedorn, H.K. Cho, K. Hilbrich, M. Feneberg, R. Goldhahn, S. Einfeldt, T. Wernicke, M. Weyers, and M. Kneissl
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
Semicond. Sci. Technol. 37, 065019 (2022).
T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, and D. Reuter
Remote Epitaxy of In_xGa_1-xAs(001) on Graphene Covered GaAs(001) Substrates
J. Cryst.Growth 593, 126756 (2022).
A. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht, and O. Bierwagen
Molecular beam epitaxy of single-crystalline bixbyite (In_1-xGa_x)₂O₃ films (x ≤ 0.18): Structural properties and consequences of compositional inhomogeneity
Phys. Rev. Mater. 6, 033604 (2022).
V. Gorelov, L. Reining, M. Feneberg, R. Goldhahn, A. Schleife, W.R.L. Lambrecht, and M. Gatti

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅npj Comput. Mater. 8, 94 (2022).
S. Wang, P. Liebing, F. Engelhart, L. Hilfert, S. Busse, R. Goldhahn, and F.T. Edelmann
Synthesis and Structural Characterization of a Series of Homoleptic First-Row Transition Metal Tris(alkynyl-amidinates)
Z. Anorg. Angew. Chemie 648, e202200009 (2022).
J. Grümbel, R. Goldhahn, D.-W. Jeon, and M. Feneberg
Anharmonicity of lattice vibrations in thin film alpha-Ga₂O₃ investigated by temperature dependent Raman spectroscopy
Appl. Phys. Lett. 120, 022104 (2022)

2021

M. Wacker, J. Riedel, H. Walles, M. Scherner, G. Awald, S. Varghese, S. Schürlein, B. Garke, P. Veluswamy, J. Wippermann, and J. Hülsmann

Comparative Evaluation on Impacts of Fibronectin, Heparin–Chitosan, and Albumin Coating of Bacterial Nanocellulose Small-Diameter Vascular Grafts on Endothelialization In Vitro
Nanomaterials 11, 1952 (2021)
J. Feldl, M. Feneberg, A. Papadogianni, J. Lähnemann, T. Nagata, O. Bierwagen, R. Goldhahn, and M. Ramsteiner

Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)₂O₃ alloy films
Appl. Phys. Lett. 119, 042101 (2021).
F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, and D.J. As

Selective Area Growth of cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001)
AIP Advances 115, 075013 (2021).
M. Feneberg, F. Romero, R. Goldhahn, T. Wernicke, C. Reich, J. Stellmach, F. Mehnke, A. Knaur, M. Weyers, and M. Kneissl

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Appl. Phys. Lett. 118, 202101 (2021).
M Hähsler, H. Nadasi, M. Feneberg, S. Marino, F. Giesselmann, S. Behrens, and A. Eremin

Magnetic Tilting in Nematic Liquid Crystals driven by Self-Assembling
Advanced Functional Materials, 2021, 2101847 (2021).
L. Artús, M. Feneberg, C. Attaccalite, J.H. Edgar, J. Li, R. Goldhahn, R. Cuscó

Ellipsometry Study of Hexagonal Boron Nitride using Synchrotron Radiation: Transparency Window in the Far‐UVC
Advanced Photonics Research, 2, 2000101 (2021).
E. Baron , M. Feneberg , R. Goldhahn, M. Deppe, F. Tacken, and D.J. As
Optical evidence of many-body effects in the ternary zincblende Al_xGa_1-xN alloy system
J. Phys. D: Appl. Phys. 54, 025101 (2021).

2020

R. Duraisamy, P. Liebing, N. Harmgarth, L. Hilfert, M. Feneberg, R. Goldhahn, V. Lorenz, F. Engelhardt, and F.T. Edelmann
Rubidium and Cesium Enediamide Complexes Derived from Bulky 1,4-Diazadienes
ACS Omega 5, 19061 (2020).
E. Kluth, M. Wieneke, J. Bläsing, H. Witte, K. Lange, A. Dadgar, R. Goldhahn, and M. Feneberg
The impurity size-effect and phonon deformation potentials in wurtzite GaN
Semicond. Sci. Technol. 35(09), 095033 (2020).
P. Ning, J. Grümbel, J. Bläsing, R. Goldhahn, D.-W. Jeon, and M. Feneberg
Lattice Vibrations and Optical Properties of alpha-Ga₂O₃ Films Grown by Halide Vapor Phase Epitaxy
Semicond. Sci. Technol. 35(09), 095001 (2020).
S. Freytag, M. Winkler, R. Goldhahn, T. Wernicke, M. Rychetsky, I.L. Koslow, M. Kneissl, D.V. Dinh, B. Corbett, P.J. Parbrook, and M. Feneberg
Polarization fields in semipolar (20-2-1) and (20-21) InGaN light emitting diodes
Appl. Phys. Lett. 116, 062106 (2020).
E. Baron, R. Goldhahn, M. Deppe, D.J. As, and M. Feneberg
Photoluminescence line shape analysis of highly n-type doped zincblende GaN
Phys. Status Solidi B 257, 1900522 (2020).
Y. Li, J. Liu, N. Xiao, L. Yu, J. Zhang, P. Ning, Z. Zhang, and P. Niu
Electrical Transport Properties of Gallium Phosphide under High Pressure
Phys. Status Solidi B 257, 1900470 (2020).

2019

P. Liebing, M. Kühling, C. Swanson, M. Feneberg, L. Hilfert, R. Goldhahn, T. Chivers, and F.T. Edelmann

Catenated and Spirocyclic Polychalcogenides from Potassium Carbonate and Elemental Chalcogens
Chem. Commun. 55, 14965 (2019).
E. Baron, R. Goldhahn, M. Deppe, D.J. As, and M. Feneberg

Influence of the free-electron concentration on the optical properties of zincblence GaN up to 10²⁰cm^-3Phys. Rev. Mater. 3, 104603 (2019).
M. Feneberg, J. Bläsing, T. Sekiyama, K. Ota, K. Akaiwa, K. Ichino, and R. Goldhahn
Anisotropic phonon properties and effective electron mass in alpha-Ga₂O₃
Editor's Pick, Appl. Phys. Lett. 114, 142102 (2019).
P. Ning, D. Wang, Y. Li, and P. Niu
Ultrasonic mist chemical vapor deposition and dielectric properties of cubic pyrochlore bismuth magnesium niobate thin films
Appl. Phys. Express 12, 045501 (2019).
M. Feneberg, C. Lidig, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn
Anisotropic optical properties of highly doped rutile SnO₂: Valence band contributions to the Burstein-Moss shift
Editor's Pick, APL Materials 7, 022508 (2019).

2018

M. Feneberg, M. Winkler, K. Lange, M. Wieneke, H. Witte, A. Dadgar, and R. Goldhahn
Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
Appl. Phys. Express 11, 101001 (2018)
M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, and M. Eickhoff
Anisotropic Optical Properties of Metastable (01-12) alpha-Ga₂O₃Grown by Plasma-Assisted Molecular Beam Epitaxy
Phys. Rev. Appl., 10, 024047 (2018)
M. Feneberg, J. Nixdorf, M.D. Neumann, N. Esser, L. Artus, R. Cusco, T. Yamaguchi, and R. Goldhahn
Ordinary dielectric function of corundumlike α-Ga₂O₃ from 40 meV up to 20 eV
Phys. Rev. Mater. 2, 044601 (2018)
A. Schleife, M.D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, and M. Feneberg
Optical properties of In₂O₃ from experiment and first principles theory: influence of lattice screening
New J. Phys. 20, 053016 (2018)
M. Budde, C. Tschammer, P. Franz, J. Feldl, M. Ramsteiner, R. Goldhahn, M. Feneberg, N. Barsan, A. Oprea, and O. Bierwagen
Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
J. Appl. Phys. 123, 195301 (2018)
M. Šilinskas, B. Kalkofen, R. Balasubramanian, A. Batmanov, E. P. Burte, N. Harmgarth, F. Zörner, F. T. Edelmann, B. Garke, and M. Lisker
Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
J. Vac. Sci. Technol. A 36, 021510 (2018)

2017

T. Wunderer, Z. Yang, M. Feneberg, M. Batres, M. Teepe, and N. Johnson
Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate
Appl. Phys. Lett. 111, 111101 (2017)
A. Segura, L. Artús, R. Cuscó, R. Goldhahn, and M. Feneberg
Band gap of corundumlike α-Ga₂0₃ determined by absorption and ellipsometry
Phys. Rev. Mater. 1, 024604 (2017)

2016

A. Minj, M.F. Romero, Y. Wang, Ö. Tuna, M. Feneberg, R. Goldhahn, G. Schmerber, P. Ruterana, C, Giesen, and M. Heuken

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Appl. Phys. Lett. 109, 221106 (2016)
P. Streitenberger, D. Zöllner

Enveloppen-Methode zur Auswertung von Größenverteilungen bei Vergröberungsprozessen

In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 50, 235-240 (2016)
D. Zöllner
Treating grain growth in thin films in three dimensions: A simulation study
Computational Materials Science 125, 51-60 (2016)
F. Tabataba-Vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe, M. Batres, M. Feneberg, B. Vancil, and N.M. Johnson

Dominance of radiative recombination from electron-beam-pumped Deep-UV AlGaN multi-quantum-well heterostructures

Appl. Phys. Lett. 109, 181105 (2016)
D. Zöllner and P. Streitenberger

Triple junction energy and mobility controlled microstructural evolution in 2D and 3D polycrystals

Proceedings of the 6th International Conference on Recrystallization and Grain Growth, Eds. E.A. Holm et al., Wiley-Verlag, ISBN: 978-1-119-32879-7, (2016), p. 3-8
P. Streitenberger and D. Zöllner

Self-similar Coarsening and the Envelope Theorem

Proceedings of the 6th International Conference on Recrystallization and Grain Growth, Eds. E.A. Holm et al., Wiley-Verlag, ISBN: 978-1-119-32879-7, (2016), p. 23-28
D.O. Demchenko, N. Izyumskaya, M. Feneberg, V. Avrutin, Ü. Özgür, R. Goldhahn, and H. Morkoç

Optical properties of the organic-inorganic hybrid perovskite CH₃NH₃PbI₃: Theory and experiment

Phys. Rev. B 94, 075206 (2016)
S. Freytag, M. Feneberg, C. Berger, J. Bläsing, A. Dadgar, G. Callsen, F. Nippert, A. Hoffmann, P. Bokov, and R. Goldhahn

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

J. Appl. Phys. 120, 015703 (2016)
D. Zöllner

Grain microstructural evolution in 2D and 3D polycrystals under triple junction energy and mobility control

Computational Materials Science 118, 325-337 (2016)
M.D. Neumann, N. Esser, J.-M. Chauveau, R. Goldhahn, and M. Feneberg

Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

Appl. Phys. Lett. 108, 221105 (2016)
Y. Xie, M. Madel, M. Feneberg, B. Neuschl, W. Jie, X. Ma, and K. Thonke

Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods

Mater. Sci. Express 3, 045011 (2016)
P. Streitenberger, D. Zöllner

Coarsening kinetics and the envelope theorem

Acta Materialia 111, 210-219 (2016)
M. Feneberg, J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J.S. Speck

Many-electron effects on the dielectric function of cubic In₂O₃: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift

Phys. Rev. B 93, 045203 (2016)
D. Zöllner, P. Streitenberger, P.R. Rios

Shedding some light on the early grain growth regime: About the effect of the initial microstructure on normal grain growth

Computational Materials Science 113, 11-20 (2016)

2015

B. Neuschl, M.L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz, and M. Feneberg

Zeeman spectroscopy of the internal transition ⁴T₁ to ⁶A₁ of Fe³⁺ ions in wurtzite GaN

J. Appl. Phys. 118, 215705 (2015)
E. Specht

A precise algorithm to detect voids in polydisperse circle packings

Proc. R. Soc. A 471, 20150421 (2015)
C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, and M. Kneissl

Strongly TE-polarized Emission from Deep UV AlGaN Quantum Well LEDs

Appl. Phys. Lett. 107, 142101 (2015)
C. Tessarek, R. Goldhahn, G. Sarau, M. Heilmann, S. Christiansen

Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods

New J. Phys. 17(08), 083047/1-8 (2015)
D. Zöllner, P. Streitenberger

Studying the influence of triple junction energy and mobility on annealing processes

IOP Conference Series: Materials Science and Engineering 89, 012061 (2015)
P. Streitenberger, D. Zöllner

von Neumann-Mullins-type evolution equations for triple and quadruple junction controlled grain growth

Scripta Materialia 109, 52-55 (2015)
P.Yu. Bokov, T. Brazzini, M.F. Romero, F. Calle, M. Feneberg, and R. Goldhahn

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Semicond. Sci. Technol. 30, 085014 (2015)
M. Feneberg, N.T. Son, and A. Kakanakova-Georgieva

Exciton luminescence in AlN triggered by hydrogen and thermal annealing

Appl. Phys. Lett. 106, 242101 (2015)
D. Zöllner and P. Streitenberger

Serial sectioning of grain microstructures under junction control: An old problem in a new guise

IOP Conference Series: Materials Science and Engineering 82, 012080 (2015)
D. Zöllner and P. Streitenberger

Self-similar grain growth in nanocrystalline two-dimensional polycrystals and thin films

TMS2015 Annual Meeting Supplemental Proceedings, Wiley, ISBN: 978-1-119-08241-5, pp. 269278 (2015)
E. Gridneva, E. Richter, M. Feneberg, M. Weyers, R. Goldhahn, and G. Tränkle

Effect of carrier gas in hydride vapor phase epitaxy on the optical and structural properties of GaN

Phys. Status Solidi B 252, 1180 (2015)
T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D.J. As

Structural and optical properties of MBE grown asymmetric cubic GaN/Al_xGa_1-xN double quantum wells

Phys. Status Solidi B 252, 873 (2015)
M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, and R. Goldhahn

Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire

Appl. Phys. Lett. 106, 182102 (2015)
B. Kalkofen, A.A. Amusan, M.S.K. Bukhari, B. Garke, M. Lisker, H. Gargouri, and E.P. Burte

Use of B₂O₃ films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

J. Vacuum Sci. Techn. A 33, 031512 (2015)
R. Goldhahn, K. Lange, and M. Feneberg

Optical properties and band structure of highly doped gallium nitride

Proc. SPIE 9363, 93630G (2015)
M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M.T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P.J. Klar, and M. Eickhoff

Electrical transport properties of Ge-doped GaN nanowires

Nanotechnology 26, 135704 (2015)
P. Streitenberger, D. Zöllner

The envelope of size distributions in Ostwald ripening and grain growth

Acta Materialia 88, 334345 (2015)

2014

M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn

Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN

Thin Solid Films 571, 502505 (2014)
P. Streitenberger

Sadi Carnot in Magdeburg und die Begründung der Thermodynamik

Monumenta Guerickiana (189), Heft 23/24, 147160, Magdeburg (2014)
H. Ravash, E. Specht, J. Vleugels, N. Moelans

3D phase-field simulation and characterization of microstructure evolution during Liquid Phase Sintering

Adv. Sci. Tech. 87, 132138 (2014)
M. Feneberg, S. Osterburg, M.F. Romero, B. Garke, R. Goldhahn, M.D. Neumann, N. Esser, J. Yan, J. Zeng, J. Wang, and J. Li

Optical properties of magnesium doped AlGaN (0.61 < x < 0.733)

J. Appl. Phys. 116, 143103 (2014)
B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, and M. Feneberg

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

J. Appl. Phys. 116, 113506 (2014)
M. Feneberg, S. Osterburg, K. Lange, C. Lidig, B. Garke, R. Goldhahn, E. Richter, C. Netzel, M.D. Neumann, N. Esser, S. Fritze, H. Witte, J. Bläsing, A. Dadgar, and A. Krost

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10²⁰ cm^-3

Phys. Rev. B 90, 075203 (2014)
P. Streitenberger, D. Zöllner

Triple junction controlled grain growth in two-dimensional polycrystals and thin films: Self-similar growth laws and grain size distributions

Acta Materialia 78, 114124 (2014)
D. Zöllner

A phenomenological approach to investigate nanocrystalline grain growth

Computational Materials Science 92, 114119 (2014)
D. Zöllner and P.R. Rios

Investigating the von Neumann-Mullins-relation under triple junction dragging

Acta Materialia 70, 290297 (2014)
M. Feneberg, C. Lidig, K. Lange, R. Goldhahn, M.D. Neumann, N. Esser, O. Bierwagen, M.E. White, M.Y. Tsai, and J.S. Speck

Ordinary and extraordinary dielectric functions of rutile SnO₂ up to 20 eV

Appl. Phys. Lett. 104, 231106 (2014)
K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey, and M. Feneberg

Nanoscale characterisation of semiconductors by cathodoluminescence

IOP Conference Series: Materials Science and Engineering 55, 012018 (2014)
D. Zöllner

A new point of view to determine the simulation temperature for the Potts model simulation of grain growth

Computational Materials Science 86, 99-107 (2014)
D. Zöllner

Topology of grain microstructures in two dimensions: A comparison of grain boundary and triple junction controlled grain growth

Modelling and Simul. Mater. Sci. Eng. 22, 025028 (2014)
C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, and M. Weyers

Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers

Appl. Phys. Lett. 104, 051906 (2014)
M. Feneberg, C. Lidig, K. Lange, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, R. Goldhahn

Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry

Phys. Status Solidi A 211, 82 (2014)

2013

M. Feneberg, K. Lange, C. Lidig, M. Wieneke, H. Witte, J. Bläsing, A. Dadgar, A. Krost, R. Goldhahn

Anisotropy of electron effective masses in highly doped nonpolar GaN

Appl. Phys. Lett. 103(23), 232104/1-4 (2013)
C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M. Kneissl

Excitonic recombination in epitaxial overgrown AlN on sapphire

Appl. Phys. Lett. 103, 212108 (2013)
B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N.M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Appl. Phys. Lett. 103, 122105/1-5 (2013)
D. Zöllner, J. Dake and C.E. Krill

Simulation der Korngrenzenmigration in polykristallinem Graphen

In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 247-252 (2013)
S. Schäfer and D. Zöllner

Triple-Junction-Winkel in diskretisierten digitalen Kornmikrostrukturen

In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 309-314 (2013)
D. Zöllner

On the Aboav-Weaire-law for junction limited grain growth in two dimensions

Computational Materials Science 79, 759-762 (2013)
M. Wieneke, H. Witte, K. Lange, M. Feneberg, A. Dadgar, J. Bläsing, R. Goldhahn, and A. Krost

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10²⁰ cm^-3

Appl. Phys. Lett. 103, 012103 (2013)
M. Feneberg, M.F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, and R. Goldhahn

Anisotropic absorption and emission of bulk (1-100) AlN

Phys. Rev. B 87, 235209 (2013)
P. Streitenberger

Analytical description of phase coarsening at high volume fractions

Acta Materialia 61, 5026-5035 (2013)
F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, and T. Baumbach

Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer

Japan. J. Appl. Phys. 52, 08JJ07 (2013)
M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, and R. Goldhahn

Transition energies and direct-indirect band gap crossing in zinc-blende Al_xGa_1-xN

Phys. Rev. B. 87, 195210 (2013)
M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, F. Calle, R. Goldhahn

Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content

Jap. J. Appl. Phys. 52, 08JK02/1-4 (2013)
T. Brazzini, S. Pandey, M.F. Romero, P.Yu. Bokov, M. Feneberg, G. Tabares, A. Cavallini, R. Goldhahn, F. Calle

Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection

Jap. J. Appl. Phys. 52, 08JK04/1-4 (2013)
D. Zöllner and P. Streitenberger

Self-Similarity as a Feature of Nanocrystalline Grain Growth

Materials Science Forum 753, 349-352 (2013)
S. Lenk, F. Schwarz, R. Goldhahn and E. Runge

Multivalence-band calculation of the excitonic dielectric function for hexagonal GaN

J. Phys.: Condens. Matter 25 (17), 175801/1-12 (2013)
M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn

Negative spin-exchange splitting in the exciton fine structure of AlN

Appl. Phys. Lett. 102, 052112 (2013)
M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Petzoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Félix, J.M. Mánuel, F.M. Morales, D. Carvalho, T. Ben, R. Garcia, and G. Koblmüller

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

J. Appl. Phys. 113(03), 033501/1-10 (2013)
E. Specht

High density packings of equal circles in rectangles with variable aspect ratio

Computers & Operational Research 40, 58-69 (2013)

2012

Y. Xie, M. Madel, Y. Li, W. Jie, B. Neuschl, M. Feneberg, and K. Thonke

Polarity-controlled ultraviolet/visible light ZnO nanorods/p-Si photodetector

J. Appl. Phys. 112, 123111 (2012)
Y. Xie, M. Madel, B. Neuschl, W. Jie, U. Röder, M. Feneberg, and K. Thonke

Silicon-on-insulator based ZnO nanowire photodetector

J. Vac. Sci. Technol. B 30, 061801 (2012)
Y. Xie, W.-Q. Jie, T. Wang, M. Wiedenmann, B. Neuschl, M. Madel, Y.-B. Wang, M. Feneberg, and K. Thonke

Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence

Chinese Phys. Lett. 29, 077803 (2012)
D. Zöllner, P. Streitenberger, and I. Fielden

The Kinetics of Individual Grains in Polycrystalline Materials

Practical Metallography 49, 428-445 (2012)
Y. Xie, W. Jie, A. Reiser, M. Feneberg, I. Tischer, M. Wiedenmann, M. Madel, R. Frey, U. Röder, and K. Thonke

Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers

Mater. Lett. 83, 31-34 (2012)
D. Zöllner and P. Streitenberger

Potts model simulation of grain boundary junction limited grain growth

Materials Science Forum 715-716, 623-628 (2012)
P. Streitenberger and D. Zöllner

Grain Size Distributions and Evolution Equations in Nanocrystalline Grain Growth

Materials Science Forum 715-716, 806-812 (2012)
D. Zöllner and P. Streitenberger

Growth history of individual grains in polycrystals: Theoretical model and simulation studies

Materials Science Forum 715-716, 877-882 (2012)
D. Zöllner

Grain microstructure evolution in two-dimensional polycrystals under limited junction mobility

Scripta Materialia 67, 41-44 (2012)
M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, R. Goldhahn

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

Appl. Phys. Lett. 100 (21), 212101 (2012)
B. Reuters, A. Wille, B. Holländer, E. Sakalauskas, N. Ketteniss, C. Mauder, R. Goldhahn, M. Heuken, H. Kalisch, and A. Vescan

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

J. Electronic Materials 41 (5), 905-909 (2012)
Y. Xie, M. Madel, T. Zoberbier, A. Reiser, W. Jie, B. Neuschl, J. Biskupek, U. Kaiser, M. Feneberg, and K. Thonke

Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire

Appl. Phys. Lett. 100, 182101 (2012)
M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp, D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn

Optical properties of cubic GaN from 1 to 20 eV

Phys. Rev. B 85, 155207 (2012)
C. Berger, A. Dadgar, J. Bläsing, A. Franke, T. Hempel, R. Goldhahn, J. Christen, A. Krost

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

Phys. Status Solidi C 9 (5), 1253-1258 (2012)
M.-F. Romero, A. Jiménez, F. González-Posada Flores, S. Martín-Horcajo, F, Calle, E. Muñoz

Impact of N₂ Plasma Power Discharge on AlGaN/GaN HEMT Performance

IEEE Trans. Electron Devices 59 (2), 374-379 (2012)
B. Neuschl, K. Thonke, M. Feneberg, S. Mita, A. Xie, R. Dalmau, R. Collazo, and Z. Sitar

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

Phys. Status Solidi B 249 (3), 511-515 (2012)
E. Sakalauskas, Ö. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch, R. Goldhahn

Dielectric function and bowing parameters of InGaN alloys

Phys. Status Solidi B 249 (3), 485-488 (2012)
T. Lehmann, T. Wolff, C. Hamel, P. Veit, B. Garke, A. Seidel-Morgenstern

Physico-chemical characterization of Ni/MCM-41 synthesized by a template ion exchange approach

Microporous and Mesoporous Materials 151, 113-125 (2012)
M. Bickermann, O. Filip, B.M. Epelbaum, P. Heimann, M. Feneberg, B. Neuschl, K. Thonke, E. Wendler, and A. Winnacker

Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties

J. Cryst. Growth 339 (1), 13-21 (2012)
E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost, and R. Goldhahn

Optical anisotropy of a-plane Al_0.8In_0.2N grown on an a-plane GaN pseudosubstrate

Phys. Status Solidi A 209 (1), 29-32 (2012)

2011

P. Streitenberger, D. Zöllner

Einfluss von reduzierter Mobilität und Energie von Tripellinien und Quadrupelpunkten auf Kornwachstum

In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 213-218 (2011)
D. Zöllner, P. Streitenberger, I. Fielden

Einzelkornkinetik von Polykristallinen Materialien

In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 189-194 (2011)
S. Kumar, S. Pandey, S.K. Gupta, T.K. Maurya, P. Schley, G. Gobsch, and R. Goldhahn

Band structure and optical properties of In-rich In_xAl_1-xN alloys

J. Phys.: Condens. Matter 23 (47), 475801/1-10 (2011)
K. Forghani, M. Gharavipour, M. Klein, F. Scholz, O. Klein, U. Kaiser, M. Feneberg, B. Neuschl, and K. Thonke

In-situ deposited SiN_x nanomask for crystal quality improvement in AlGaN

Phys. Status Solidi C 8 (7-8), 2063-2065 (2011)
M. Madel, Y. Xie, I. Tischer, B. Neuschl, M. Feneberg, R. Frey, and K. Thonke

Catalytic growth of hexagonally aligned ZnO nanorods

Phys. Status Solidi B 208 (8), 1915-1918 (2011)
C. Kraft, M. Hädrich, H. Metzner, U. Reislöhner, P. Schley, R. Goldhahn

Investigation of the Excitonic Luminescence Band of CdTe Solar Cells by Photoluminescence and Photoluminescence Excitation Spectroscopy

Thin Solid Films 519 (21), 7173-7175 (2011)
C. Kraft, A. Brömel, S. Schönherr, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn, W. Wesch, H. Metzner

Phosphorus Implanted Cadmium Telluride Solar Cells

Thin Solid Films 519 (21), 7153-7155 (2011)
A. Riefer, F. Fuchs, C. Rödl, A. Schleife, F. Bechstedt, R. Goldhahn

Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs

Phys. Rev. B 84 (7), 075218/1-13 (2011)
M. Feneberg, M. Röppischer, N. Esser, C. Cobet, B. Neuschl, T. Meisch, K. Thonke, R. Goldhahn

Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al_0.94Ga_0.06N

Appl. Phys. Lett. 99 (2), 021903 (2011)
M.D. Neumann, C. Cobet, N. Esser, B. Laumer, T.A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn

Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

J. Appl. Phys. 110 (1), 013520/1-8 (2011)
M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, Z. Sitar, R. Dalmau, J. Xie, S. Mita, R. Goldhahn

Sharp bound and free exciton lines from homoepitaxial AlN

Phys. Status Solidi A 208 (7), 1520-1522 (2011)
E. Sakalauskas, H. Behmenburg, P. Schley, G. Gobsch, C. Giesen, H. Kalisch, R.H. Jansen, M. Heuken, R. Goldhahn

Dielectric function of Al-rich AlInN in the range 1-18 eV

Phys. Status Solidi A 208 (7), 1517-1519 (2011)
E. Sakalauskas, B. Reuters, L. Rahimzadeh Khoshroo, H. Kalisch, M. Heuken, A. Vescan, M. Röppischer, C. Cobet, G. Gobsch, R. Goldhahn

Dielectric function and optical properties of quaternary AlInGaN alloys

J. Appl. Phys. 110 (1), 013102/1-9 (2011)
A. Kraus, S. Hammadi, J. Hisek, R. Buß, H. Jönen, H. Bremers, U. Rossow, E. Sakalauskas, R. Goldhahn, A. Hangleiter

Growth and characterization of InGaN by RF-MBE

J. Cryst. Growth 323 (1), 72-75 (2011)
T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As

Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation

J. Cryst. Growth 323 (1), 286-289 (2011)
Dana Zöllner

A Potts model for junction limited grain growth

Computational Materials Science 50, 2712-2719 (2011)
G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M. Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, K. Thonke, and D. Hommel

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods

Nanotechnology 22, 265202 (2011)
T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As

Molecular beam epitaxy based growth of cubic GaN quantum dots

Phys. Status Solidi C 8 (3), 1495 (2011)
R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar

Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates

Journal of the Electrochemical Society 158, H530 (2011)
G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, C. Cobet, N. Esser, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, and R. Goldhahn

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band-edge

Phys. Rev. B 83 (19), 195202 (2011)
P. Streitenberger, D. Zöllner

Evolution equations and size distributions in nanocrystalline grain growth

Acta Materialia 59 (10), 4235-4243 (2011)
K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, L. Kirste, H.P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn

Electrical properties of Al_xGa_1-xN/GaN heterostructures with low Al content

J. Appl. Phys. 109 (5), 053705/1-5 (2011)
I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen

Stacking fault related luminescence features in semi-polar GaN

Phys. Status Solidi B 248 (3), 611-615 (2011)
T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, D. Draeger, A. Hangleiter, and F. Scholz

Three-dimensional GaN for semipolar light emitters

Feature Article in Phys. Status Solidi B 248 (3), 549-560 (2011)
M. Jetter, C. Wächter, A. Mayer, M. Feneberg, K. Thonke, and P. Michler

Quaternary AlInGaN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficient light emission

J. Cryst. Growth 315 (1), 254-257 (2011)
K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, R.A.R. Leute, F. Scholz, M. Feneberg, B. Neuschl, K. Thonke, O. Klein, U. Kaiser, R. Gutt, and T. Passow

High quality AlGaN epilayers grown on sapphire using SiN interlayers

J. Cryst. Growth 315 (1), 216-219 (2011)
I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen

I₂ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band

Phys. Rev. B 83, 035314 (2011)
Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, Ch. Mafredotti, A. Pasquarelli, M. Feneberg, K. Thonke, E. Vittone, and E. Kohn

Transparent microelectrode array in diamond technology

J. Micro-Nano Mechatronics 6, 33 (2011)

2010

T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As

Growth of cubic GaN quantum dots

AIP Conf. Proc. 1292, 165 (2010)
C. Kraft, H. Metzner, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn

Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers

J. Appl. Phys. 108 (12), 124503/1-8 (2010)
D. Zöllner, P. Streitenberger

Grain Size Distributions in Normal Grain Growth

Praktische Metallographie 47 (11), 618-639 (2010)
B. Neuschl, K.J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, and F. Scholz

Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN_x interlayers

Appl. Phys. Lett. 97, 192108 (2010)
R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar

Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates

ECS transactions 33, 43 (2010)
T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As

Droplet epitaxy of zinc-blende GaN quantum dots

J. Cryst. Growth 312, 3235 (2010)
D. Zöllner, P. Streitenberger

Characterisation of 3D Microstructural Evolution of Individual Grains

Proc. 31st Risø Int. Symp. on Challenges in materials science and possibilities in 3D and 4D characterization techniques, ed. by N. Hansen, D. J. Jensen, S. F. Nielsen, H. F. Poulsen, B. Ralph, p. 505-513 (2010)
Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, Ch. Mafredotti, A. Pasquarelli, M. Feneberg, K. Thonke, E. Vittone, and E. Kohn

Transparent microelectrode array in diamond technology

IEEE Nanomed Conf. Series, 3rd. Int. Conf. 2009 282 (2010)
K.J. Fujan, M. Feneberg, B. Neuschl, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets

Appl. Phys. Lett. 97, 101904 (2010)
E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R.H. Jansen, J. Bläsing, A. Dadgar, A. Krost and R. Goldhahn

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

J. Phys. D: Appl. Phys. 43, 365102 (2010)
M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann

High-excitation and high-resolution photoluminescence spectra of bulk AlN

Phys. Rev. B 82, 075208 (2010)
P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, K. Köhler, M. Mikulla, O. Ambacher, L. Harm, M. Lorenzini, T. Rödle, K. Riepe, K. Bellmann, C. Buchheim, R. Goldhahn

Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency

Phys. Status Solidi C 7 (10), 2398-2403 (2010)
F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen

GaInN-based LED structures on selectively grown semi-polar crystal facets

Phys. Status Solidi A 207 (6), 1407-1413 (2010)
M. Bickermann, B.M. Epelbaum, O. Filip, P. Heimann, M. Feneberg, S. Nagata, and A. Winnacker

Deep-UV transparent bulk single-crystalline AlN substrates

Phys. Status Solidi C 7 (7-8), 1743-1745 (2010)
G. Rossbach, M. Röppischer, P. Schley, G. Gobsch, C. Werner, C. Cobet, N. Esser, A. Dadgar, M. Wieneke, A. Krost, R. Goldhahn

Valence-band splitting and optical anisotropy of AlN

Phys. Status Solidi B 247 (7), 1679-1682 (2010)
T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, N. Esser, C. Cobet, K. Lischka, and D.J. As

MBE growth of cubic AlN on 3C-SiC substrate

Phys. Status Solidi A 207 (6), 1365-1368 (2010)
I. Hotovy, J. Pezoldt, M. Kadlecikova, T. Kups, L. Spiess, J. Breza, E. Sakalauskas, R. Goldhahn, V. Rehacek

Structural characterization of sputtered indium oxide films deposited at room temperature

Thin Solid Films 518 (16), 4508-4511 (2010)
M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz

Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates

J. Appl. Phys. 107, 103517 (2010)
K. Thonke, M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, R. Sauer, J. Biskupek, and U. Kaiser

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures

Phys. Status Solidi B 247, 1464 (2010)
A. Romanyuk, V. Melnik, Y. Olikh, J. Biskupek, U. Kaiser, M. Feneberg, K. Thonke, and P. Oelhafen

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

J. Lumin. 130, 87 (2010)
P. Schley, J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, J.S. Speck, R. Goldhahn

Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates

Phys. Status Solidi A 207 (5), 1062-1065 (2010)
E. Sakalauskas, P. Schley, J. Räthel, T.A. Klar, R. Müller, J. Pezoldt, K. Tonisch, J. Grandal, M.A. Sánchez-García, E. Calleja, A. Vilalta-Clemente, P. Ruterana, R. Goldhahn

Optical properties of InN grown on Si(111) substrate

Phys. Status Solidi A 207 (5), 1066-1069 (2010)
K. Köhler, S. Müller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H.P. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, R. Goldhahn

Influence of the surface potential on electrical properties of Al_xGa_1-xN/GaN heterostructures with different Al content: Effect of growth method

J. Appl. Phys. 107 (5), 053711 (2010)
T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, K. Lischka, D.J. As

Growth of atomically smooth cubic AlN by molecular beam epitaxy

Phys. Status Solidi C 7 (1), 17-20 (2010)

before 2010

(incomplete)

V. Lavchiev, R. Holly, G. Chen, F. Schäffler, R. Goldhahn, W. Jantsch

Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 µm

Optics Letters 34 (24), 3785-3787 (2009)
M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, D.J. As

Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities

J. Appl. Phys. 106 (7), 076104 (2009)
P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Dammann, W. Bronner, R. Quay, O. Ambacher

Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

J. Appl. Phys. 106 (2), 023535 (2009)
C. Cobet, R. Goldhahn, W. Richter, N. Esser (Feature Article)

Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase

Phys. Status Solidi B 246 (7), 1440-1449 (2009)
M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn

Near band-gap photoluminescence of InN due to Mahan excitons

Phys. Status Solidi C 6 (S2), S385-S388 (2009)
P. Schley, R. Goldhahn, G. Gobsch, M. Feneberg, K. Thonke, X. Wang, A. Yoshikawa

Influence of strain on the band gap energy of wurtzite InN

Phys. Status Solidi B 246 (6), 1177-1180 (2009)
M. Röppischer, R. Goldhahn, C. Buchheim, F. Furtmayr, T. Wassner, M. Eickhoff, C. Cobet, N. Esser (Editor's Choice)

Analysis of polarization-dependent photoreflectance studies for c-plane GaN films grown on a-plane sapphire

Phys. Status Solidi A 206 (5), 773-779 (2009)
J. Eberhardt, J. Cieslak, H. Metzner, Th. Hahn, R. Goldhahn, F. Hudert, J. Kräußlich, U. Kaiser, A. Chuvilin, U. Reislöhner, W. Witthuhn

Epitaxial and polycrystalline CuInS₂ layers: Structural metastability and its influence on the photoluminescence

Thin Solid Films 517 (7), 2248-2251 (2009)
C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N.Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost

Influence of anisotropic strain on excitonic transitions in a-plane GaN films

Microelectronics Journal 40 (2), 322-324 (2009)
F. Scholz, S. B. Thapa, M. Fikry, J. Hertkorn, T. Wunderer, F. Lipski, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L. D. Yao, and D. Gerthsen

Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes

IOP Conf. Ser.: Mater. Sci. Eng. 6, 012002 (2009)
D. Wahl, A. Ladenburger, M. Feneberg, W. Schoch, K. Thonke, and R. Sauer

Semiconductor quantum dots through conversion of micelle-generated metal clusters

Appl. Phys. Lett. 95, 093105 (2009)
R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, and M. Kasu

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

Appl. Phys. Lett. 95, 031903 (2009)
T. Wunderer, F. Lipski, S. Schwaiger, J. Hertkorn, M. Wiedenmann, M. Feneberg, K. Thonke, and F. Scholz

Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces

Jpn. J. Appl. Phys. 48, 060201 (2009)
L. D. Yao, D. Weissenberger, M. Dürrschnabel, D. Gerthsen, I. Tischer, M. Wiedenmann, M. Feneberg, A. Reiser, and K. Thonke

Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing

J. Appl. Phys. 105, 103521 (2009)
F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke

GaN-based Light Emitting Diodes on Selectively Grown Semipolar Crystal Facets

MRS Bulletin 34, 297 (2009)
M. Schirra, M. Feneberg, G. M. Prinz, A. Reiser, T. Röder, K. Thonke, and R. Sauer

Beating of Coupled Ultraviolet Light Modes in Zinc Oxide Nanoresonators

Phys. Rev. Lett. 102, 073903 (2009)
D. Weissenberger, D. Gerthsen, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, H. Zhou, J. Sartor, J. Fallert, C. Klingshirn, and H. Kalt

Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods

Appl. Phys. Lett. 94, 042107 (2009)
F. Lipski, S.B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, M. Wiedenmann, K. Thonke, H. Hochmuth, M. Lorenz, and M. Grundmann

Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer

Phys. Status Solidi C 6, S352 (2009)
A. Reiser, V. Raeesi, G. M. Prinz, M. Schirra, M. Feneberg, U. Röder, R. Sauer, and K. Thonke

Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates

Microelectronics J. 40, 306 (2009)
K. Thonke, M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, and R. Sauer

The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures

Microelectronics J. 40, 210 (2009)
J.S. Rojas-Ramírez, R. Goldhahn, P. Moser, J. Huerta-Ruelas, J. Hernándes-Rosas, M. López-López

Temperature dependence of the photoluminescence emission from In_xGa_1-xAs quantum wells on GaAs(311) substrates

J. Appl. Phys. 104 (12), 124304 (2008)
A. Schleife, C. Rödl, F. Fuchs, J. Furthmüller, F. Bechstedt, P.H. Jefferson, T.D. Veal, C.F. Mc Conville, L.F.J. Piper, A. DeMasi, K.E. Smith, H. Lösch, R. Goldhahn, C. Cobet, J. Zúñiga-Pérez, V. Muñoz-Sanjosé

Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO

J. Korean Phys. Soc. 53 (5), 2811-2815 (2008)
K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, R. Goldhahn

Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures

J. Appl. Phys. 104 (8), 084516 (2008)
M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn

Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements

Phys. Rev. B 77 (24), 245207 (2008)
K. Tonisch, C. Buchheim, F. Niebelschütz, M. Donahue, R. Goldhahn, V. Cimalla, O. Ambacher

Piezoelectric actuation of all-nitride MEMS

Phys. Status Solidi C 5 (6), 1910-1913 (2008)
P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D. J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt

Band gap and effective electron mass of cubic InN

Phys. Status Solidi C 5 (6), 2342-2344 (2008)
P. Schley, R. Goldhahn, C. Napierala, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke

Dielectric function of cubic InN from the mid-infrared to the visible spectral range

Semicond. Sci. Technol. 23 (5), 055001 (2008)
M. Rakel, C. Cobet, N. Esser, F. Fuchs, F. Bechstedt, R. Goldhahn, W.G. Schmidt, W. Schaff

GaN and InN conduction-band states studied by ellipsometry

Phys. Rev. B 77 (11), 115120 (2008)
C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F.Niebelschütz, O. Ambacher

Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas

Appl. Phys. Lett. 92 (1), 013510 (2008)
D. Zöllner, P. Streitenberger

Monte Carlo Simulation of Normal Grain Growth in Three Dimensions

Materials Science Forum 567-568, 81-84 (2008)
C.P. Yeh, M. Lisker, V. Vezin, B. Seitzinger, P.K. Baumann, B. Garke, J. Bläsing, A. Krost, E.P. Burte

Fabrication of ferroelectric PZT thin films by liquid delivery MOCVD using novel Zr and Ti precursors

Integrated Ferroelectrics 104 (1), 16-24 (2008)
J. Eberhardt, H. Metzner, R. Goldhahn, F. Hudert, K. Schulz, U. Reislöhner, T. Hahn, J. Cieslak, W. Witthuhn

Optical properties of strained polycrystalline CuInS₂ layers

Mater. Res. Soc. Symp. Proc. 1012, 419-424 (2007)
P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D.J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, W.J. Schaff

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

Appl. Phys. Lett. 91 (9), 092101 (2007)
J. Eberhardt, H. Metzner, K. Schulz, U. Reislöhner, Th. Hahn, J. Cieslak, W. Witthuhn, R. Goldhahn, F. Hudert, J. Kräußlich

Excitonic luminescence of polycrystalline CuInS₂ solar cell material under the influence of strain

J. Appl. Phys. 102 (3), 033503 (2007)
C. Buchheim, R. Goldhahn, A.T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff

Stark shift of interband transitions in AlN/GaN superlattices

Appl. Phys. Lett. 90 (24), 241906 (2007)
P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, N. Esser

Dielectric function and Van Hove singularities for In-rich In_xGa_1-xN alloys: Comparison of N- and metal-face materials

Phys. Rev. B 75 (20), 205204 (2007)
J. Eberhardt, K. Schulz, H. Metzner, J. Cieslak, Th. Hahn, U. Reislöhner, M. Gossla, F. Hudert, R. Goldhahn, W. Witthuhn

Epitaxial and polycrystalline CuInS₂ thin films: A comparison of opto-electronic properties

Thin Solid Films 515 (15), 6147-6150 (2007)
R. Goldhahn, A.T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff (Editor's Choice)

Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction

Phys. Status Solidi A 204 (2), 447-458 (2007)
J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F. Li, W. Löffler, M. Hetterich, H. Kalt

Molecular beam epitaxy of phase pure cubic InN

Appl. Phys. Lett. 89 (26), 261903 (2006)
V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher

Origin of n-type conductivity in nominally undoped InN

Materialwissenschaft und Werkstofftechnik 37 (11), 924-928 (2006)
V. Cimalla, V. Lebedev, F.M. Morales, R. Goldhahn, O. Ambacher

Model for the thickness dependence of electron concentration in InN films

Appl. Phys. Lett. 89, 172109 (2006)
V.G. Talalaev, J.W. Tomm, A.S. Sokolov, I.V. Shtrom, B.V. Novikov, A.T. Winzer, R. Goldhahn, G. Gobsch, N.D. Zakharov, P. Werner, U. Gösele, G.E. Cirlin, A.A. Tonkikh, V.M. Ustinov, G.G. Tarasov

Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field

J. Appl. Phys. 100 (8), 083704 (2006)
A.T. Winzer, G. Gobsch, R. Goldhahn, D. Fuhrmann, A. Hangleiter, A. Dadgar, A. Krost

Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment

Phys. Rev. B 74 (12), 125207 (2006)
C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher

Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy

Phys. Status Solidi C 3 (6), 2009-2013 (2006)
V. Cimalla , M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff

The conductivity of Mg-doped InN

Phys. Status Solidi C 3 (6), 1721-1724 (2006)
P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff

Transition energies and Stokes shift analysis for In-rich InGaN alloys

Phys. Status Solidi B 243 (7), 1572-1576 (2006)
R. Goldhahn, P. Schley, A.T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff

Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN

J. Cryst. Growth 288 (2), 273-277 (2006)
R. Goldhahn, P. Schley, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff

Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys

Phys. Status Solidi A 203 (1), 42-49 (2006)
A.T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

Appl. Phys. Lett. 88 (2), 024101 (2006)
P. Streitenberger and D. Zöllner

Effective growth law from three-dimensional grain growth simulations and new analytical grain size distribution

Scripta Materialia 55 (5), 461-464 (2006)
D. Zöllner and P. Streitenberger

Three Dimensional Normal Grain Growth: Monte Carlo Potts Model Simulation and Analytical Mean Field Theory

Scripta Materialia 54 (9), 1697-1702 (2006)
S. Matichyn, M. Lisker, M. Silinskas, B. Garke, E. Burte
Characterisation of Ferroelectric PbZr_xTi_1-xO₃ (PZT) Thin Films Prepared by Liquid-Delivery Metalorganic Chemical Vapor Deposition
Integrated Ferroelectrics 81, 289-295 (2006)