ABTEILUNG MATERIALPHYSIK

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Liste der Publikationen der Abteilung Materialphysik seit 2010. Die meisten Publikationen sind direkt verlinkt. Wenn Sie Interesse an einer unserer Publikationen haben, sie aber nicht erhalten können, sprechen Sie uns bitte direkt an!

2024

• E. Kluth, Y. Nagashima, S. Osawa, Y. Hirose, J. Bläsing, A. Strittmatter, R. Goldhahn, and M. Feneberg
  Blue shift of the absorption onset and bandgap bowing in rutile Ge_xSn_1-xO₂
  Appl. Phys. Lett. 125, 122102 (2024).
  
  
• E. Basurto, P. Gurin, E.Specht, and G. Odriozola
  Searching for the maximal packing fraction of hard disks confined by a circular cavity through replica exchange/event-chain Monte Carlo
  J. Chem. Phys. 161, 044110 (2024).
  
  
• J. Grümbel, R. Goldhahn, M. Feneberg, Y. Oshima, A. Dubroka, and M. Ramsteiner
  Band gaps and phonons of quasi-bulk rocksalt ScN
  Phys. Rev. Materials 8, L071601 (2024).
  
  
• A. Murad, E. Baron, M. Feneberg, M. Baumann, M. Lehmann, and A. Eremin
  Polarity in liquid crystals formed self-assembled umbrella-shaped subphthalocyanine mesogens
  ACS Applied Materials & Interfaces 16, 25025  (2024).
  
  
• V. Gorelov, L. Reining, M. Feneberg, R. Goldhahn, A. Schleife, W.R.L. Lambrecht, and M. Gatti
  

  Author Correction: Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅
  npj Comput. Mater. 10, 85 (2024).

• A. Mudzakir, P. Liebing, E. Haak, A. Fischer, L. Hilfert, R. Goldhahn, and F.T. Edelmann
  An unusual phosphide addition reaction of 1,3-dimethyl-1,2,3-benzotriazolium iodide
  Inorg. Chem. Comm. 161, 111924 (2024).

2023

• R. Johnson, P. Liebing, D. P. Musikanth, S. A. Regitz, D. S. Amenta, R. Goldhahn, F. T. Edelmann, and J. W. Gilje
  Pyrazolylpropanoate Complexes of Palladium(II) Chloride
  Z. Anorg. Allg. Chem. 649, e202300076 (2023).
  
  
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradik, M. Rebarz, J. Andreasson, M. Deppe. D.J. As, and M. Feneberg
  Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN II: Absorption edge shift with gain and temperature effects
  J. Appl. Phys. 134, 075703 (2023).
  
  
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradik, M. Rebarz, J. Andreasson, M. Deppe. D.J. As, and M. Feneberg
  Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN I: Determination of the dielectric function
  J. Appl. Phys. 134, 075702 (2023).
  
  
• N. Harmgarth, P. Liebing, V. Lorenz, F. Engelhardt, L. Hilfert, S. Busse, R. Goldhahn, and F.T. Edelmann
  Synthesis and Structural Characterization of p-Carboranylamidine Derivatives
  Molecules. 28, 3837 (2023).
  
  
• E. Kluth, A F M Anhar Uddin Bhuiyan, L. Meng, J. Bläsing, H. Zhao, A. Strittmatter, R. Goldhahn, and M. Feneberg
  Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al_xGa_1-x)₂O₃ alloys
  Japan. J. Appl. Phys. 62, 051001 (2023).
  
  
• S. Wang, P. Liebing, M. Feneberg, F.M. Sroor, F. Engelhardt, L. Hilfert, S. Busse, E. Kluth, R. Goldhahn, and F.T. Edelmann
  Synthesis and Structural Characterization of Divalent Transition Metal Alkynylamidinate Complexes
  Eur. J. Inorg. Chem. 26, e202300027 (2023).
  
  
• E. Kluth, M.W. Fay, C. Parmenter, J.W. Roberts, E. Smith, C.T. Stoppiello, F.C.-P. Massabuau, R. Goldhahn, and M. Feneberg
  Redshift and amplitude increase in the dielectric function of corundum-like α-(Ti_xGa_1−x)₂O₃
  Appl. Phys. Lett. 122, 092101 (2023).
  
  
• K. Egbo, E. Luna, J. Lähnemann, G. Hoffmann, A. Trampert, J. Grümbel, E. Kluth, M. Feneberg, R. Goldhahn, and O. Bierwagen
  Epitaxial synthesis of unintentionally-doped p-type SnO (001) via suboxide molecular beam epitaxy
  J. Appl. Phys. 133, 045701 (2023).
  
  
• S. Wang, P. Liebing, F. Engelhardt, L. Hilfert, S. Busse, R. Goldhahn, and F. T. Edelmann
  Synthesis and Complexation Study of New Aminoalkynylamidinate Ligands
  Z. Anorg. Angew. Chemie 649(1), e202200289 (2023).

2022

• R. Cuscó, T. Yamaguchi, E. Kluth, R. Goldhahn, and M. Feneberg
  Optical properties of corundum-structured In₂O₃
  Appl. Phys. Lett. 121, 062106 (2022).
  
  
• E. Baron, R. Goldhahn, S. Espinoza, M. Zahradnik, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, and M. Feneberg
  Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
  cond-mat arxiv:2206.02223 (2022).
  
  
• L.E. Ratcliff, T. Oshima, F. Nippert, B.M. Janzen, E. Kluth, R. Goldhahn, M. Feneberg, P. Mazzolini, O. Bierwagen, C. Wouters, M. Nofal, M. Albrecht, J.E.N. Swallow, L.A.H. Jones, P.K. Thakur, T.-L. Lee, C. Kalha, C. Schlueter, T.D. Veal, J.B. Varley, M.R. Wagner, and A. Regoutz
  Tackling Disorder in γ-Ga₂O₃
  Adv. Mater. 34, 2204217 (2022).
  
  
• V. Lorenz, P. Lebing, M. Müller, L. Hilfert, M. Feneberg, E. Kluth, M. Kühling, M.R. Buchner, R. Goldhahn, and F.T. Edelmann
  Small Compound - Big Colors: Synthesis and Structural Investigation of Brightly Colored Alkaline Earth Metal 1,3-Dimethylviolurates
  Dalton Trans. 51, 7975 (2022).
  
  
• S. Wu, M. Guttmann, N. Lobo-Ploch, F. Gindele, N. Susilo, A. Knauer, T. Kolbe, J. Raß, S. Hagedorn, H.K. Cho, K. Hilbrich, M. Feneberg, R. Goldhahn, S. Einfeldt, T. Wernicke, M. Weyers, and M. Kneissl
  Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
  Semicond. Sci. Technol. 37, 065019 (2022).
  
  
• T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, and D. Reuter
  Remote Epitaxy of In_xGa_1-xAs(001) on Graphene Covered GaAs(001) Substrates
  J. Cryst.Growth 593, 126756 (2022).
  
  
• A. Papadogianni, C. Wouters, R. Schewski, J. Feldl, J. Lähnemann, T. Nagata, E. Kluth, M. Feneberg, R. Goldhahn, M. Ramsteiner, M. Albrecht, and O. Bierwagen
  Molecular beam epitaxy of single-crystalline bixbyite (In_1-xGa_x)₂O₃ films (x ≤ 0.18): Structural properties and consequences of compositional inhomogeneity
  Phys. Rev. Mater. 6, 033604 (2022).
  
  
• V. Gorelov, L. Reining, M. Feneberg, R. Goldhahn, A. Schleife, W.R.L. Lambrecht, and M. Gatti
  

  Delocalization of dark and bright excitons in flat-band materials and the optical properties of V₂O₅
  npj Comput. Mater. 8, 94 (2022).

• S. Wang, P. Liebing, F. Engelhart, L. Hilfert, S. Busse, R. Goldhahn, and F.T. Edelmann
  

  Synthesis and Structural Characterization of a Series of Homoleptic First-Row Transition Metal Tris(alkynyl-amidinates)
  Z. Anorg. Angew. Chemie 648, e202200009 (2022).

• J. Grümbel, R. Goldhahn, D.-W. Jeon, and M. Feneberg
  

  Anharmonicity of lattice vibrations in thin film alpha-Ga₂O₃ investigated by temperature dependent Raman spectroscopy
  Appl. Phys. Lett. 120, 022104 (2022)

2021

• M. Wacker, J. Riedel, H. Walles, M. Scherner, G. Awald, S. Varghese, S. Schürlein, B. Garke, P. Veluswamy, J. Wippermann, and J. Hülsmann
  

  Comparative Evaluation on Impacts of Fibronectin, Heparin–Chitosan, and Albumin Coating of Bacterial Nanocellulose Small-Diameter Vascular Grafts on Endothelialization In Vitro
  Nanomaterials 11, 1952 (2021)

• J. Feldl, M. Feneberg, A. Papadogianni, J. Lähnemann, T. Nagata, O. Bierwagen, R. Goldhahn, and M. Ramsteiner
  

  Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)₂O₃ alloy films
  Appl. Phys. Lett. 119, 042101 (2021).

• F. Meier, M. Protte, E. Baron, M. Feneberg, R. Goldhahn, D. Reuter, and D.J. As
  

  Selective Area Growth of cubic Gallium Nitride on Silicon (001) and 3C-Silicon Carbide (001)
  AIP Advances 115, 075013 (2021).

• M. Feneberg, F. Romero, R. Goldhahn, T. Wernicke, C. Reich, J. Stellmach, F. Mehnke, A. Knaur, M. Weyers, and M. Kneissl
  

  Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
  Appl. Phys. Lett. 118, 202101 (2021).

• M. Hähsler, H. Nadasi, M. Feneberg, S. Marino, F. Giesselmann, S. Behrens, and A. Eremin
  

  Magnetic Tilting in Nematic Liquid Crystals driven by Self-Assembling
  Advanced Functional Materials 2021, 2101847 (2021).

• L. Artús, M. Feneberg, C. Attaccalite, J.H. Edgar, J. Li, R. Goldhahn, R. Cuscó
  Ellipsometry Study of Hexagonal Boron Nitride using Synchrotron Radiation: Transparency Window in the Far‐UVC
  Advanced Photonics Research 2, 2000101 (2021).

• E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, and D.J. As
  

  Optical evidence of many-body effects in the ternary zincblende Al_xGa_1-xN alloy system
  J. Phys. D: Appl. Phys. 54, 025101 (2021).

2020

• R. Duraisamy, P. Liebing, N. Harmgarth, L. Hilfert, M. Feneberg, R. Goldhahn, V. Lorenz, F. Engelhardt, and F.T. Edelmann
  Rubidium and Cesium Enediamide Complexes Derived from Bulky 1,4-Diazadienes
  ACS Omega 5, 19061 (2020).

• E. Kluth, M. Wieneke, J. Bläsing, H. Witte, K. Lange,  A. Dadgar, R. Goldhahn, and M. Feneberg
  The impurity size-effect and phonon deformation potentials in wurtzite GaN
  Semicond. Sci. Technol. 35(09), 095033 (2020).

• P. Ning, J. Grümbel, J. Bläsing, R. Goldhahn, D.-W. Jeon, and M. Feneberg
  Lattice Vibrations and Optical Properties of alpha-Ga₂O₃ Films Grown by Halide Vapor Phase Epitaxy
  Semicond. Sci. Technol. 35(09), 095001 (2020).

• S. Freytag, M. Winkler, R. Goldhahn, T. Wernicke, M. Rychetsky, I.L. Koslow, M. Kneissl, D.V. Dinh, B. Corbett, P.J. Parbrook, and M. Feneberg
  Polarization fields in semipolar (20-2-1) and (20-21) InGaN light emitting diodes
  Appl. Phys. Lett. 116, 062106 (2020).

• E. Baron, R. Goldhahn, M. Deppe, D.J. As, and M. Feneberg
  Photoluminescence line shape analysis of highly n-type doped zincblende GaN
  Phys. Status Solidi B 257, 1900522 (2020).

• Y. Li, J. Liu, N. Xiao, L. Yu, J. Zhang, P. Ning, Z. Zhang, and P. Niu
  Electrical Transport Properties of Gallium Phosphide under High Pressure
  Phys. Status Solidi B 257, 1900470 (2020).

2019

• P. Liebing, M. Kühling, C. Swanson, M. Feneberg, L. Hilfert, R. Goldhahn, T. Chivers, and F.T. Edelmann
  

  Catenated and Spirocyclic Polychalcogenides from Potassium Carbonate and Elemental Chalcogens
  Chem. Commun. 55, 14965 (2019).

• E. Baron, R. Goldhahn, M. Deppe, D.J. As, and M. Feneberg
  

  Influence of the free-electron concentration on the optical properties of zincblence GaN up to 10²⁰cm^-3
  Phys. Rev. Mater. 3, 104603 (2019).

• M. Feneberg, J. Bläsing, T. Sekiyama, K. Ota, K. Akaiwa, K. Ichino, and R. Goldhahn
  Anisotropic phonon properties and effective electron mass in alpha-Ga₂O₃
  Editor's Pick, Appl. Phys. Lett. 114, 142102 (2019).

• P. Ning, D. Wang, Y. Li, and P. Niu
  Ultrasonic mist chemical vapor deposition and dielectric properties of cubic pyrochlore bismuth magnesium niobate thin films
  Appl. Phys. Express 12, 045501 (2019)

• M. Feneberg, C. Lidig, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn
  Anisotropic optical properties of highly doped rutile SnO₂: Valence band contributions to the Burstein-Moss shift
  Editor's Pick, APL Materials 7, 022508 (2019)

2018

• M. Feneberg, M. Winkler, K. Lange, M. Wieneke, H. Witte, A. Dadgar, and R. Goldhahn
  Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
  Appl. Phys. Express 11, 101001 (2018)

• M. Kracht, A. Karg, M. Feneberg, J. Bläsing, J. Schörmann, R. Goldhahn, and M. Eickhoff
  Anisotropic Optical Properties of Metastable (01-12) alpha-Ga₂O₃ Grown by Plasma-Assisted Molecular Beam Epitaxy
  Phys. Rev. Appl., 10, 024047 (2018)

• M. Feneberg, J. Nixdorf, M.D. Neumann, N. Esser, L. Artus, R. Cusco, T. Yamaguchi, and R. Goldhahn
  Ordinary dielectric function of corundumlike α-Ga₂O₃ from 40 meV up to 20 eV
  Phys. Rev. Mater. 2, 044601 (2018)
  

• A. Schleife, M.D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, and M. Feneberg
  Optical properties of In₂O₃ from experiment and first principles theory: influence of lattice screening
  New J. Phys. 20, 053016 (2018)
  

• M. Budde, C. Tschammer, P. Franz, J. Feldl, M. Ramsteiner, R. Goldhahn, M. Feneberg, N. Barsan, A. Oprea, and O. Bierwagen
  Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
  J. Appl. Phys. 123, 195301 (2018)
  

• M. Šilinskas, B. Kalkofen, R. Balasubramanian, A. Batmanov, E. P. Burte, N. Harmgarth, F. Zörner, F. T. Edelmann, B. Garke, and M. Lisker
  Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
  J. Vac. Sci. Technol. A 36, 021510 (2018)

2017

• T. Wunderer, Z. Yang, M. Feneberg, M. Batres, M. Teepe, and N. Johnson
  Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate
  Appl. Phys. Lett. 111, 111101 (2017)
  

• A. Segura, L. Artús, R. Cuscó, R. Goldhahn, and M. Feneberg
  Band gap of corundumlike α-Ga₂0₃ determined by absorption and ellipsometry
  Phys. Rev. Mater. 1, 024604 (2017)

2016

• A. Minj, M.F. Romero, Y. Wang, Ö. Tuna, M. Feneberg, R. Goldhahn, G. Schmerber, P. Ruterana, C, Giesen, and M. Heuken
  Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
  Appl. Phys. Lett. 109, 221106 (2016)
  
• P. Streitenberger, D. Zöllner
  Enveloppen-Methode zur Auswertung von Größenverteilungen bei Vergröberungsprozessen
  In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 50, 235-240 (2016)
• D. Zöllner
  Treating grain growth in thin films in three dimensions: A simulation study
  Computational Materials Science 125, 51-60 (2016)
  
• F. Tabataba-Vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe, M. Batres, M. Feneberg, B. Vancil, and N.M. Johnson
  Dominance of radiative recombination from electron-beam-pumped Deep-UV AlGaN multi-quantum-well heterostructures
  Appl. Phys. Lett. 109, 181105 (2016)
  
• D. Zöllner and P. Streitenberger
  Triple junction energy and mobility controlled microstructural evolution in 2D and 3D polycrystals
  Proceedings of the 6th International Conference on Recrystallization and Grain Growth, Eds. E.A. Holm et al., Wiley-Verlag, ISBN: 978-1-119-32879-7, (2016), p. 3-8
• P. Streitenberger and D. Zöllner
  Self-similar Coarsening and the Envelope Theorem
  Proceedings of the 6th International Conference on Recrystallization and Grain Growth, Eds. E.A. Holm et al., Wiley-Verlag, ISBN: 978-1-119-32879-7, (2016), p. 23-28
• D.O. Demchenko, N. Izyumskaya, M. Feneberg, V. Avrutin, Ü. Özgür, R. Goldhahn, and H. Morkoç
  Optical properties of the organic-inorganic hybrid perovskite CH₃NH₃PbI₃: Theory and experiment
  Phys. Rev. B 94, 075206 (2016)
  
• S. Freytag, M. Feneberg, C. Berger, J. Bläsing, A. Dadgar, G. Callsen, F. Nippert, A. Hoffmann, P. Bokov, and R. Goldhahn
  Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
  J. Appl. Phys. 120, 015703 (2016)
  
• D. Zöllner
  Grain microstructural evolution in 2D and 3D polycrystals under triple junction energy and mobility control
  Computational Materials Science 118, 325-337 (2016)
  
• M.D. Neumann, N. Esser, J.-M. Chauveau, R. Goldhahn, and M. Feneberg
  Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
  Appl. Phys. Lett. 108, 221105 (2016)
  
• Y. Xie, M. Madel, M. Feneberg, B. Neuschl, W. Jie, X. Ma, and K. Thonke
  Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods
  Mater. Sci. Express 3, 045011 (2016)
  
• P. Streitenberger, D. Zöllner
  Coarsening kinetics and the envelope theorem
  Acta Materialia 111, 210-219 (2016)
  
• M. Feneberg, J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J.S. Speck
  Many-electron effects on the dielectric function of cubic In₂O₃: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
  Phys. Rev. B 93, 045203 (2016)
  
• D. Zöllner, P. Streitenberger, P.R. Rios
  Shedding some light on the early grain growth regime: About the effect of the initial microstructure on normal grain growth
  Computational Materials Science 113, 11-20 (2016)
  

2015

• B. Neuschl, M.L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz, and M. Feneberg
  Zeeman spectroscopy of the internal transition ⁴T₁ to ⁶A₁ of Fe³⁺ ions in wurtzite GaN
  J. Appl. Phys. 118, 215705 (2015)
  
• E. Specht
  A precise algorithm to detect voids in polydisperse circle packings
  Proc. R. Soc. A 471, 20150421 (2015)
  
• C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, and M. Kneissl
  Strongly TE-polarized Emission from Deep UV AlGaN Quantum Well LEDs
  Appl. Phys. Lett. 107, 142101 (2015)
  
• C. Tessarek, R. Goldhahn, G. Sarau, M. Heilmann, S. Christiansen
  Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods
  New J. Phys. 17(08), 083047/1-8 (2015)
  
• D. Zöllner, P. Streitenberger
  Studying the influence of triple junction energy and mobility on annealing processes
  IOP Conference Series: Materials Science and Engineering 89, 012061 (2015)
  
• P. Streitenberger, D. Zöllner
  von Neumann-Mullins-type evolution equations for triple and quadruple junction controlled grain growth
  Scripta Materialia 109, 52-55 (2015)
  
• P.Yu. Bokov, T. Brazzini, M.F. Romero, F. Calle, M. Feneberg, and R. Goldhahn
  Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
  Semicond. Sci. Technol. 30, 085014 (2015)
  
• M. Feneberg, N.T. Son, and A. Kakanakova-Georgieva
  Exciton luminescence in AlN triggered by hydrogen and thermal annealing
  Appl. Phys. Lett. 106, 242101 (2015)
  
• D. Zöllner and P. Streitenberger
  Serial sectioning of grain microstructures under junction control: An old problem in a new guise
  IOP Conference Series: Materials Science and Engineering 82, 012080 (2015)
  
• D. Zöllner and P. Streitenberger
  Self-similar grain growth in nanocrystalline two-dimensional polycrystals and thin films
  TMS2015 Annual Meeting Supplemental Proceedings, Wiley, ISBN: 978-1-119-08241-5, pp. 269278 (2015)
  
• E. Gridneva, E. Richter, M. Feneberg, M. Weyers, R. Goldhahn, and G. Tränkle
  Effect of carrier gas in hydride vapor phase epitaxy on the optical and structural properties of GaN
  Phys. Status Solidi B 252, 1180 (2015)
  
• T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D.J. As
  Structural and optical properties of MBE grown asymmetric cubic GaN/Al_xGa_1-xN double quantum wells
  Phys. Status Solidi B 252, 873 (2015)
  
• M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, and R. Goldhahn
  Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
  Appl. Phys. Lett. 106, 182102 (2015)
  
• B. Kalkofen, A.A. Amusan, M.S.K. Bukhari, B. Garke, M. Lisker, H. Gargouri, and E.P. Burte
  Use of B₂O₃ films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
  J. Vacuum Sci. Techn. A 33, 031512 (2015)
  
• R. Goldhahn, K. Lange, and M. Feneberg
  Optical properties and band structure of highly doped gallium nitride
  Proc. SPIE 9363, 93630G (2015)
  
• M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M.T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P.J. Klar, and M. Eickhoff
  Electrical transport properties of Ge-doped GaN nanowires
  Nanotechnology 26, 135704 (2015)
  
• P. Streitenberger, D. Zöllner
  The envelope of size distributions in Ostwald ripening and grain growth
  Acta Materialia 88, 334345 (2015)

2014

• M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn
  Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
  Thin Solid Films 571, 502505 (2014)
  
• P. Streitenberger
  Sadi Carnot in Magdeburg und die Begründung der Thermodynamik
  Monumenta Guerickiana (189), Heft 23/24, 147160, Magdeburg (2014)
• H. Ravash, E. Specht, J. Vleugels, N. Moelans
  3D phase-field simulation and characterization of microstructure evolution during Liquid Phase Sintering
  Adv. Sci. Tech. 87, 132138 (2014)
  
• M. Feneberg, S. Osterburg, M.F. Romero, B. Garke, R. Goldhahn, M.D. Neumann, N. Esser, J. Yan, J. Zeng, J. Wang, and J. Li
  Optical properties of magnesium doped AlGaN (0.61 < x < 0.733)
  J. Appl. Phys. 116, 143103 (2014)
  
• B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, and M. Feneberg
  Composition dependent valence band order in c-oriented wurtzite AlGaN layers
  J. Appl. Phys. 116, 113506 (2014)
  
• M. Feneberg, S. Osterburg, K. Lange, C. Lidig, B. Garke, R. Goldhahn, E. Richter, C. Netzel, M.D. Neumann, N. Esser, S. Fritze, H. Witte, J. Bläsing, A. Dadgar, and A. Krost
  Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10²⁰ cm^-3
  Phys. Rev. B 90, 075203 (2014)
  
• P. Streitenberger, D. Zöllner
  Triple junction controlled grain growth in two-dimensional polycrystals and thin films: Self-similar growth laws and grain size distributions
  Acta Materialia 78, 114124 (2014)
  
• D. Zöllner
  A phenomenological approach to investigate nanocrystalline grain growth
  Computational Materials Science 92, 114119 (2014)
  
• D. Zöllner and P.R. Rios
  Investigating the von Neumann-Mullins-relation under triple junction dragging
  Acta Materialia 70, 290297 (2014)
  
• M. Feneberg, C. Lidig, K. Lange, R. Goldhahn, M.D. Neumann, N. Esser, O. Bierwagen, M.E. White, M.Y. Tsai, and J.S. Speck
  Ordinary and extraordinary dielectric functions of rutile SnO₂ up to 20 eV
  Appl. Phys. Lett. 104, 231106 (2014)
  
• K. Thonke, I. Tischer, M. Hocker, M. Schirra, K. Fujan, M. Wiedenmann, R. Schneider, M. Frey, and M. Feneberg
  Nanoscale characterisation of semiconductors by cathodoluminescence
  IOP Conference Series: Materials Science and Engineering 55, 012018 (2014)
  
• D. Zöllner
  A new point of view to determine the simulation temperature for the Potts model simulation of grain growth
  Computational Materials Science 86, 99-107 (2014)
  
• D. Zöllner
  Topology of grain microstructures in two dimensions: A comparison of grain boundary and triple junction controlled grain growth
  Modelling and Simul. Mater. Sci. Eng. 22, 025028 (2014)
  
• C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, and M. Weyers
  Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers
  Appl. Phys. Lett. 104, 051906 (2014)
  
• M. Feneberg, C. Lidig, K. Lange, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, R. Goldhahn
  Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry
  Phys. Status Solidi A 211, 82 (2014)

2013

• M. Feneberg, K. Lange, C. Lidig, M. Wieneke, H. Witte, J. Bläsing, A. Dadgar, A. Krost, R. Goldhahn
  Anisotropy of electron effective masses in highly doped nonpolar GaN
  Appl. Phys. Lett. 103(23), 232104/1-4 (2013)
  
• C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M. Kneissl
  Excitonic recombination in epitaxial overgrown AlN on sapphire
  Appl. Phys. Lett. 103, 212108 (2013)
  
• B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N.M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar
  Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
  Appl. Phys. Lett. 103, 122105/1-5 (2013)
  
• D. Zöllner, J. Dake and C.E. Krill
  Simulation der Korngrenzenmigration in polykristallinem Graphen
  In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 247-252 (2013)
  
• S. Schäfer and D. Zöllner
  Triple-Junction-Winkel in diskretisierten digitalen Kornmikrostrukturen
  In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 309-314 (2013)
• D. Zöllner
  On the Aboav-Weaire-law for junction limited grain growth in two dimensions
  Computational Materials Science 79, 759-762 (2013)
  
• M. Wieneke, H. Witte, K. Lange, M. Feneberg, A. Dadgar, J. Bläsing, R. Goldhahn, and A. Krost
  Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10²⁰ cm^-3
  Appl. Phys. Lett. 103, 012103 (2013)
  
• M. Feneberg, M.F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, and R. Goldhahn
  Anisotropic absorption and emission of bulk (1-100) AlN
  Phys. Rev. B 87, 235209 (2013)
  
• P. Streitenberger
  Analytical description of phase coarsening at high volume fractions
  Acta Materialia 61, 5026-5035 (2013)
  
• F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, and T. Baumbach
  Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
  Japan. J. Appl. Phys. 52, 08JJ07 (2013)
  
• M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, and R. Goldhahn
  Transition energies and direct-indirect band gap crossing in zinc-blende Al_xGa_1-xN
  Phys. Rev. B. 87, 195210 (2013)  
• M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, F. Calle, R. Goldhahn
  Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
  Jap. J. Appl. Phys. 52, 08JK02/1-4 (2013)
  
• T. Brazzini, S. Pandey, M.F. Romero, P.Yu. Bokov, M. Feneberg, G. Tabares, A. Cavallini, R. Goldhahn, F. Calle
  Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
  Jap. J. Appl. Phys. 52, 08JK04/1-4 (2013)
  
• D. Zöllner and P. Streitenberger
  Self-Similarity as a Feature of Nanocrystalline Grain Growth
  Materials Science Forum 753, 349-352 (2013)
  
• S. Lenk, F. Schwarz, R. Goldhahn and E. Runge
  Multivalence-band calculation of the excitonic dielectric function for hexagonal GaN
  J. Phys.: Condens. Matter 25 (17), 175801/1-12 (2013)
  
• M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn
  Negative spin-exchange splitting in the exciton fine structure of AlN
  Appl. Phys. Lett. 102, 052112 (2013)
  
• M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Petzoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Félix, J.M. Mánuel, F.M. Morales, D. Carvalho, T. Ben, R. Garcia, and G. Koblmüller
  N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
  J. Appl. Phys. 113(03), 033501/1-10 (2013)
  
• E. Specht
  High density packings of equal circles in rectangles with variable aspect ratio
  Computers & Operational Research 40, 58-69 (2013)

2012

• Y. Xie, M. Madel, Y. Li, W. Jie, B. Neuschl, M. Feneberg, and K. Thonke
  Polarity-controlled ultraviolet/visible light ZnO nanorods/p-Si photodetector
  J. Appl. Phys. 112, 123111 (2012)
  
• Y. Xie, M. Madel, B. Neuschl, W. Jie, U. Röder, M. Feneberg, and K. Thonke
  Silicon-on-insulator based ZnO nanowire photodetector
  J. Vac. Sci. Technol. B 30, 061801 (2012)
  
• Y. Xie, W.-Q. Jie, T. Wang, M. Wiedenmann, B. Neuschl, M. Madel, Y.-B. Wang, M. Feneberg, and K. Thonke
  Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence
  Chinese Phys. Lett. 29, 077803 (2012)
  
• D. Zöllner, P. Streitenberger, and I. Fielden
  The Kinetics of Individual Grains in Polycrystalline Materials
  Practical Metallography 49, 428-445 (2012)
  
• Y. Xie, W. Jie, A. Reiser, M. Feneberg, I. Tischer, M. Wiedenmann, M. Madel, R. Frey, U. Röder, and K. Thonke
  Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers
  Mater. Lett. 83, 31-34 (2012)
  
• D. Zöllner and P. Streitenberger
  Potts model simulation of grain boundary junction limited grain growth
  Materials Science Forum 715-716, 623-628 (2012)
  
• P. Streitenberger and D. Zöllner
  Grain Size Distributions and Evolution Equations in Nanocrystalline Grain Growth
  Materials Science Forum 715-716, 806-812 (2012)
  
• D. Zöllner and P. Streitenberger
  Growth history of individual grains in polycrystals: Theoretical model and simulation studies
  Materials Science Forum 715-716, 877-882 (2012)
  
• D. Zöllner
  Grain microstructure evolution in two-dimensional polycrystals under limited junction mobility
  Scripta Materialia 67, 41-44 (2012)
  
• M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, R. Goldhahn
  Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
  Appl. Phys. Lett. 100 (21), 212101 (2012)
  
• B. Reuters, A. Wille, B. Holländer, E. Sakalauskas, N. Ketteniss, C. Mauder, R. Goldhahn, M. Heuken, H. Kalisch, and A. Vescan
  Growth Studies on Quaternary AlInGaN Layers for HEMT Application
  J. Electronic Materials 41 (5), 905-909 (2012)
  
• Y. Xie, M. Madel, T. Zoberbier, A. Reiser, W. Jie, B. Neuschl, J. Biskupek, U. Kaiser, M. Feneberg, and K. Thonke
  Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
  Appl. Phys. Lett. 100, 182101 (2012)
  
• M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp, D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn
  Optical properties of cubic GaN from 1 to 20 eV
  Phys. Rev. B 85, 155207 (2012)
  
• C. Berger, A. Dadgar, J. Bläsing, A. Franke, T. Hempel, R. Goldhahn, J. Christen, A. Krost
  Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
  Phys. Status Solidi C 9 (5), 1253-1258 (2012)
  
• M.-F. Romero, A. Jiménez, F. González-Posada Flores, S. Martín-Horcajo, F, Calle, E. Muñoz
  Impact of N₂ Plasma Power Discharge on AlGaN/GaN HEMT Performance
  IEEE Trans. Electron Devices 59 (2), 374-379 (2012)
  
• B. Neuschl, K. Thonke, M. Feneberg, S. Mita, A. Xie, R. Dalmau, R. Collazo, and Z. Sitar
  Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
  Phys. Status Solidi B 249 (3), 511-515 (2012)
  
• E. Sakalauskas, Ö. Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch, R. Goldhahn
  Dielectric function and bowing parameters of InGaN alloys
  Phys. Status Solidi B 249 (3), 485-488 (2012)
  
• T. Lehmann, T. Wolff, C. Hamel, P. Veit, B. Garke, A. Seidel-Morgenstern
  Physico-chemical characterization of Ni/MCM-41 synthesized by a template ion exchange approach
  Microporous and Mesoporous Materials 151, 113-125 (2012)
  
• M. Bickermann, O. Filip, B.M. Epelbaum, P. Heimann, M. Feneberg, B. Neuschl, K. Thonke, E. Wendler, and A. Winnacker
  Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties
  J. Cryst. Growth 339 (1), 13-21 (2012)
  
• E. Sakalauskas, M. Wieneke, A. Dadgar, G. Gobsch, A. Krost, and R. Goldhahn
  Optical anisotropy of a-plane Al_0.8In_0.2N grown on an a-plane GaN pseudosubstrate
  Phys. Status Solidi A 209 (1), 29-32 (2012)

2011

• P. Streitenberger, D. Zöllner
  Einfluss von reduzierter Mobilität und Energie von Tripellinien und Quadrupelpunkten auf Kornwachstum
  In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 213-218 (2011)
• D. Zöllner, P. Streitenberger, I. Fielden
  Einzelkornkinetik von Polykristallinen Materialien
  In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 189-194 (2011)
• S. Kumar, S. Pandey, S.K. Gupta, T.K. Maurya, P. Schley, G. Gobsch, and R. Goldhahn
  Band structure and optical properties of In-rich In_xAl_1-xN alloys
  J. Phys.: Condens. Matter 23 (47), 475801/1-10 (2011)
  
• K. Forghani, M. Gharavipour, M. Klein, F. Scholz, O. Klein, U. Kaiser, M. Feneberg, B. Neuschl, and K. Thonke
  In-situ deposited SiN_x nanomask for crystal quality improvement in AlGaN
  Phys. Status Solidi C 8 (7-8), 2063-2065 (2011)
  
• M. Madel, Y. Xie, I. Tischer, B. Neuschl, M. Feneberg, R. Frey, and K. Thonke
  Catalytic growth of hexagonally aligned ZnO nanorods
  Phys. Status Solidi B 208 (8), 1915-1918 (2011)
  
• C. Kraft, M. Hädrich, H. Metzner, U. Reislöhner, P. Schley, R. Goldhahn
  Investigation of the Excitonic Luminescence Band of CdTe Solar Cells by Photoluminescence and Photoluminescence Excitation Spectroscopy
  Thin Solid Films 519 (21), 7173-7175 (2011)
  
• C. Kraft, A. Brömel, S. Schönherr, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn, W. Wesch, H. Metzner
  Phosphorus Implanted Cadmium Telluride Solar Cells
  Thin Solid Films 519 (21), 7153-7155 (2011)
  
• A. Riefer, F. Fuchs, C. Rödl, A. Schleife, F. Bechstedt, R. Goldhahn
  Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
  Phys. Rev. B 84 (7), 075218/1-13 (2011)
  
• M. Feneberg, M. Röppischer, N. Esser, C. Cobet, B. Neuschl, T. Meisch, K. Thonke, R. Goldhahn
  Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al_0.94Ga_0.06N
  Appl. Phys. Lett. 99 (2), 021903 (2011)
  
• M.D. Neumann, C. Cobet, N. Esser, B. Laumer, T.A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn
  Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes
  J. Appl. Phys. 110 (1), 013520/1-8 (2011)
  
• M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, Z. Sitar, R. Dalmau, J. Xie, S. Mita, R. Goldhahn
  Sharp bound and free exciton lines from homoepitaxial AlN
  Phys. Status Solidi A 208 (7), 1520-1522 (2011)
  
• E. Sakalauskas, H. Behmenburg, P. Schley, G. Gobsch, C. Giesen, H. Kalisch, R.H. Jansen, M. Heuken, R. Goldhahn
  Dielectric function of Al-rich AlInN in the range 1-18 eV
  Phys. Status Solidi A 208 (7), 1517-1519 (2011)
  
• E. Sakalauskas, B. Reuters, L. Rahimzadeh Khoshroo, H. Kalisch, M. Heuken, A. Vescan, M. Röppischer, C. Cobet, G. Gobsch, R. Goldhahn
  Dielectric function and optical properties of quaternary AlInGaN alloys
  J. Appl. Phys. 110 (1), 013102/1-9 (2011)
  
• A. Kraus, S. Hammadi, J. Hisek, R. Buß, H. Jönen, H. Bremers, U. Rossow, E. Sakalauskas, R. Goldhahn, A. Hangleiter
  Growth and characterization of InGaN by RF-MBE
  J. Cryst. Growth 323 (1), 72-75 (2011)
  
• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation
  J. Cryst. Growth 323 (1), 286-289 (2011)
  
• Dana Zöllner
  A Potts model for junction limited grain growth
  Computational Materials Science 50, 2712-2719 (2011)
  
• G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M. Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, K. Thonke, and D. Hommel
  Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
  Nanotechnology 22, 265202 (2011)
  
• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  Molecular beam epitaxy based growth of cubic GaN quantum dots
  Phys. Status Solidi C 8 (3), 1495 (2011)
  
• R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar
  Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates
  Journal of the Electrochemical Society 158, H530 (2011)
  
• G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, C. Cobet, N. Esser, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, and R. Goldhahn
  Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band-edge
  Phys. Rev. B 83 (19), 195202 (2011)
  
• P. Streitenberger, D. Zöllner
  Evolution equations and size distributions in nanocrystalline grain growth
  Acta Materialia 59 (10), 4235-4243 (2011)
  
• K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, L. Kirste, H.P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
  Electrical properties of Al_xGa_1-xN/GaN heterostructures with low Al content
  J. Appl. Phys. 109 (5), 053705/1-5 (2011)
  
• I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
  Stacking fault related luminescence features in semi-polar GaN
  Phys. Status Solidi B 248 (3), 611-615 (2011)
  
• T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, D. Draeger, A. Hangleiter, and F. Scholz
  Three-dimensional GaN for semipolar light emitters
  Feature Article in Phys. Status Solidi B 248 (3), 549-560 (2011)
  
• M. Jetter, C. Wächter, A. Mayer, M. Feneberg, K. Thonke, and P. Michler
  Quaternary AlInGaN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficient light emission
  J. Cryst. Growth 315 (1), 254-257 (2011)
  
• K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, R.A.R. Leute, F. Scholz, M. Feneberg, B. Neuschl, K. Thonke, O. Klein, U. Kaiser, R. Gutt, and T. Passow
  High quality AlGaN epilayers grown on sapphire using SiN interlayers
  J. Cryst. Growth 315 (1), 216-219 (2011)
  
• I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
  I₂ basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
  Phys. Rev. B 83, 035314 (2011)
  
• Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, Ch. Mafredotti, A. Pasquarelli, M. Feneberg, K. Thonke, E. Vittone, and E. Kohn
  Transparent microelectrode array in diamond technology
  J. Micro-Nano Mechatronics 6, 33 (2011)

2010

• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  Growth of cubic GaN quantum dots
  AIP Conf. Proc. 1292, 165 (2010)
  
• C. Kraft, H. Metzner, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn
  Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers
  J. Appl. Phys. 108 (12), 124503/1-8 (2010)
  
• D. Zöllner, P. Streitenberger
  Grain Size Distributions in Normal Grain Growth
  Praktische Metallographie 47 (11), 618-639 (2010)
  
• B. Neuschl, K.J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, and F. Scholz
  Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN_x interlayers
  Appl. Phys. Lett. 97, 192108 (2010)
  
• R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar
  Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates
  ECS transactions 33, 43 (2010)
  
• T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
  Droplet epitaxy of zinc-blende GaN quantum dots
  J. Cryst. Growth 312, 3235 (2010)
  
• D. Zöllner, P. Streitenberger
  Characterisation of 3D Microstructural Evolution of Individual Grains
  Proc. 31st Risø Int. Symp. on Challenges in materials science and possibilities in 3D and 4D characterization techniques, ed. by N. Hansen, D. J. Jensen, S. F. Nielsen, H. F. Poulsen, B. Ralph, p. 505-513 (2010)
• Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, Ch. Mafredotti, A. Pasquarelli, M. Feneberg, K. Thonke, E. Vittone, and E. Kohn
  Transparent microelectrode array in diamond technology
  IEEE Nanomed Conf. Series, 3rd. Int. Conf. 2009 282 (2010)
  
• K.J. Fujan, M. Feneberg, B. Neuschl, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser
  Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
  Appl. Phys. Lett. 97, 101904 (2010)
  
• E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R.H. Jansen, J. Bläsing, A. Dadgar, A. Krost and R. Goldhahn
  Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
  J. Phys. D: Appl. Phys. 43, 365102 (2010)
  
• M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann
  High-excitation and high-resolution photoluminescence spectra of bulk AlN
  Phys. Rev. B 82, 075208 (2010)
  
• P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, K. Köhler, M. Mikulla, O. Ambacher, L. Harm, M. Lorenzini, T. Rödle, K. Riepe, K. Bellmann, C. Buchheim, R. Goldhahn
  Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
  Phys. Status Solidi C 7 (10), 2398-2403 (2010)
  
• F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen
  GaInN-based LED structures on selectively grown semi-polar crystal facets
  Phys. Status Solidi A 207 (6), 1407-1413 (2010)
  
• M. Bickermann, B.M. Epelbaum, O. Filip, P. Heimann, M. Feneberg, S. Nagata, and A. Winnacker
  Deep-UV transparent bulk single-crystalline AlN substrates
  Phys. Status Solidi C 7 (7-8), 1743-1745 (2010)
  
• G. Rossbach, M. Röppischer, P. Schley, G. Gobsch, C. Werner, C. Cobet, N. Esser, A. Dadgar, M. Wieneke, A. Krost, R. Goldhahn
  Valence-band splitting and optical anisotropy of AlN
  Phys. Status Solidi B 247 (7), 1679-1682 (2010)
  
• T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, M. Röppischer, N. Esser, C. Cobet, K. Lischka, and D.J. As
  MBE growth of cubic AlN on 3C-SiC substrate
  Phys. Status Solidi A 207 (6), 1365-1368 (2010)
  
• I. Hotovy, J. Pezoldt, M. Kadlecikova, T. Kups, L. Spiess, J. Breza, E. Sakalauskas, R. Goldhahn, V. Rehacek
  Structural characterization of sputtered indium oxide films deposited at room temperature
  Thin Solid Films 518 (16), 4508-4511 (2010)
  
• M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz
  Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
  J. Appl. Phys. 107, 103517 (2010)
  
• K. Thonke, M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, R. Sauer, J. Biskupek, and U. Kaiser
  The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
  Phys. Status Solidi B 247, 1464 (2010)
  
• A. Romanyuk, V. Melnik, Y. Olikh, J. Biskupek, U. Kaiser, M. Feneberg, K. Thonke, and P. Oelhafen
  Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states
  J. Lumin. 130, 87 (2010)
  
• P. Schley, J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, J.S. Speck, R. Goldhahn
  Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates
  Phys. Status Solidi A 207 (5), 1062-1065 (2010)
  
• E. Sakalauskas, P. Schley, J. Räthel, T.A. Klar, R. Müller, J. Pezoldt, K. Tonisch, J. Grandal, M.A. Sánchez-García, E. Calleja, A. Vilalta-Clemente, P. Ruterana, R. Goldhahn
  Optical properties of InN grown on Si(111) substrate
  Phys. Status Solidi A 207 (5), 1066-1069 (2010)
  
• K. Köhler, S. Müller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H.P. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, R. Goldhahn
  Influence of the surface potential on electrical properties of Al_xGa_1-xN/GaN heterostructures with different Al content: Effect of growth method
  J. Appl. Phys. 107 (5), 053711 (2010)
  
• T. Schupp, G. Rossbach, P. Schley, R. Goldhahn, K. Lischka, D.J. As
  Growth of atomically smooth cubic AlN by molecular beam epitaxy
  Phys. Status Solidi C 7 (1), 17-20 (2010)

älter als 2010

(unvollständig)

• V. Lavchiev, R. Holly, G. Chen, F. Schäffler, R. Goldhahn, W. Jantsch
  Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 µm
  Optics Letters 34 (24), 3785-3787 (2009)
  
• M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, D.J. As
  Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
  J. Appl. Phys. 106 (7), 076104 (2009)
  
• P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Dammann, W. Bronner, R. Quay, O. Ambacher
  Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
  J. Appl. Phys. 106 (2), 023535 (2009)
  
• C. Cobet, R. Goldhahn, W. Richter, N. Esser (Feature Article)
  Identification of van Hove singularities in the GaN dielectric function: a comparison of the cubic and hexagonal phase
  Phys. Status Solidi B 246 (7), 1440-1449 (2009)
  
• M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn
  Near band-gap photoluminescence of InN due to Mahan excitons
  Phys. Status Solidi C 6 (S2), S385-S388 (2009)
  
• P. Schley, R. Goldhahn, G. Gobsch, M. Feneberg, K. Thonke, X. Wang, A. Yoshikawa
  Influence of strain on the band gap energy of wurtzite InN
  Phys. Status Solidi B 246 (6), 1177-1180 (2009)
  
• M. Röppischer, R. Goldhahn, C. Buchheim, F. Furtmayr, T. Wassner, M. Eickhoff, C. Cobet, N. Esser (Editor's Choice)
  Analysis of polarization-dependent photoreflectance studies for c-plane GaN films grown on a-plane sapphire
  Phys. Status Solidi A 206 (5), 773-779 (2009)
  
• J. Eberhardt, J. Cieslak, H. Metzner, Th. Hahn, R. Goldhahn, F. Hudert, J. Kräußlich, U. Kaiser, A. Chuvilin, U. Reislöhner, W. Witthuhn
  Epitaxial and polycrystalline CuInS₂ layers: Structural metastability and its influence on the photoluminescence
  Thin Solid Films 517 (7), 2248-2251 (2009)
  
• C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N.Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost
  Influence of anisotropic strain on excitonic transitions in a-plane GaN films
  Microelectronics Journal 40 (2), 322-324 (2009)
  
• F. Scholz, S. B. Thapa, M. Fikry, J. Hertkorn, T. Wunderer, F. Lipski, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L. D. Yao, and D. Gerthsen
  Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes
  IOP Conf. Ser.: Mater. Sci. Eng. 6, 012002 (2009)
  
• D. Wahl, A. Ladenburger, M. Feneberg, W. Schoch, K. Thonke, and R. Sauer
  Semiconductor quantum dots through conversion of micelle-generated metal clusters
  Appl. Phys. Lett. 95, 093105 (2009)
  
• R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, and M. Kasu
  Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
  Appl. Phys. Lett. 95, 031903 (2009)
  
• T. Wunderer, F. Lipski, S. Schwaiger, J. Hertkorn, M. Wiedenmann, M. Feneberg, K. Thonke, and F. Scholz
  Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
  Jpn. J. Appl. Phys. 48, 060201 (2009)
  
• L. D. Yao, D. Weissenberger, M. Dürrschnabel, D. Gerthsen, I. Tischer, M. Wiedenmann, M. Feneberg, A. Reiser, and K. Thonke
  Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing
  J. Appl. Phys. 105, 103521 (2009)
  
• F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke
  GaN-based Light Emitting Diodes on Selectively Grown Semipolar Crystal Facets
  MRS Bulletin 34, 297 (2009)
  
• M. Schirra, M. Feneberg, G. M. Prinz, A. Reiser, T. Röder, K. Thonke, and R. Sauer
  Beating of Coupled Ultraviolet Light Modes in Zinc Oxide Nanoresonators
  Phys. Rev. Lett. 102, 073903 (2009)
  
• D. Weissenberger, D. Gerthsen, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, H. Zhou, J. Sartor, J. Fallert, C. Klingshirn, and H. Kalt
  Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
  Appl. Phys. Lett. 94, 042107 (2009)
  
• F. Lipski, S.B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, M. Wiedenmann, K. Thonke, H. Hochmuth, M. Lorenz, and M. Grundmann
  Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
  Phys. Status Solidi C 6, S352 (2009)
  
• A. Reiser, V. Raeesi, G. M. Prinz, M. Schirra, M. Feneberg, U. Röder, R. Sauer, and K. Thonke
  Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates
  Microelectronics J. 40, 306 (2009)
  
• K. Thonke, M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, and R. Sauer
  The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures
  Microelectronics J. 40, 210 (2009)
  
• J.S. Rojas-Ramírez, R. Goldhahn, P. Moser, J. Huerta-Ruelas, J. Hernándes-Rosas, M. López-López
  Temperature dependence of the photoluminescence emission from In_xGa_1-xAs quantum wells on GaAs(311) substrates
  J. Appl. Phys. 104 (12), 124304 (2008)
  
• A. Schleife, C. Rödl, F. Fuchs, J. Furthmüller, F. Bechstedt, P.H. Jefferson, T.D. Veal, C.F. Mc Conville, L.F.J. Piper, A. DeMasi, K.E. Smith, H. Lösch, R. Goldhahn, C. Cobet, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
  Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO
  J. Korean Phys. Soc. 53 (5), 2811-2815 (2008)
  
• K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, R. Goldhahn
  Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
  J. Appl. Phys. 104 (8), 084516 (2008)
  
• M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn
  Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
  Phys. Rev. B 77 (24), 245207 (2008)
  
• K. Tonisch, C. Buchheim, F. Niebelschütz, M. Donahue, R. Goldhahn, V. Cimalla, O. Ambacher
  Piezoelectric actuation of all-nitride MEMS
  Phys. Status Solidi C 5 (6), 1910-1913 (2008)
  
• P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D. J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt
  Band gap and effective electron mass of cubic InN
  Phys. Status Solidi C 5 (6), 2342-2344 (2008)
  
• P. Schley, R. Goldhahn, C. Napierala, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke
  Dielectric function of cubic InN from the mid-infrared to the visible spectral range
  Semicond. Sci. Technol. 23 (5), 055001 (2008)
  
• M. Rakel, C. Cobet, N. Esser, F. Fuchs, F. Bechstedt, R. Goldhahn, W.G. Schmidt, W. Schaff
  GaN and InN conduction-band states studied by ellipsometry
  Phys. Rev. B 77 (11), 115120 (2008)
  
• C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F.Niebelschütz, O. Ambacher
  Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
  Appl. Phys. Lett. 92 (1), 013510 (2008)
  
• D. Zöllner, P. Streitenberger
  Monte Carlo Simulation of Normal Grain Growth in Three Dimensions
  Materials Science Forum 567-568, 81-84 (2008)
  
• C.P. Yeh, M. Lisker, V. Vezin, B. Seitzinger, P.K. Baumann, B. Garke, J. Bläsing, A. Krost, E.P. Burte
  Fabrication of ferroelectric PZT thin films by liquid delivery MOCVD using novel Zr and Ti precursors
  Integrated Ferroelectrics 104 (1), 16-24 (2008)
  
• J. Eberhardt, H. Metzner, R. Goldhahn, F. Hudert, K. Schulz, U. Reislöhner, T. Hahn, J. Cieslak, W. Witthuhn
  Optical properties of strained polycrystalline CuInS₂ layers
  Mater. Res. Soc. Symp. Proc. 1012, 419-424 (2007)
  
• P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D.J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, W.J. Schaff
  Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
  Appl. Phys. Lett. 91 (9), 092101 (2007)
  
• J. Eberhardt, H. Metzner, K. Schulz, U. Reislöhner, Th. Hahn, J. Cieslak, W. Witthuhn, R. Goldhahn, F. Hudert, J. Kräußlich
  Excitonic luminescence of polycrystalline CuInS₂ solar cell material under the influence of strain
  J. Appl. Phys. 102 (3), 033503 (2007)
  
• C. Buchheim, R. Goldhahn, A.T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff
  Stark shift of interband transitions in AlN/GaN superlattices
  Appl. Phys. Lett. 90 (24), 241906 (2007)
  
• P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, N. Esser
  Dielectric function and Van Hove singularities for In-rich In_xGa_1-xN alloys: Comparison of N- and metal-face materials
  Phys. Rev. B 75 (20), 205204 (2007)
  
• J. Eberhardt, K. Schulz, H. Metzner, J. Cieslak, Th. Hahn, U. Reislöhner, M. Gossla, F. Hudert, R. Goldhahn, W. Witthuhn
  Epitaxial and polycrystalline CuInS₂ thin films: A comparison of opto-electronic properties
  Thin Solid Films 515 (15), 6147-6150 (2007)
  
• R. Goldhahn, A.T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff (Editor's Choice)
  Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction
  Phys. Status Solidi A 204 (2), 447-458 (2007)
  
• J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F. Li, W. Löffler, M. Hetterich, H. Kalt
  Molecular beam epitaxy of phase pure cubic InN
  Appl. Phys. Lett. 89 (26), 261903 (2006)
• V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
  Origin of n-type conductivity in nominally undoped InN
  Materialwissenschaft und Werkstofftechnik 37 (11), 924-928 (2006)
• V. Cimalla, V. Lebedev, F.M. Morales, R. Goldhahn, O. Ambacher
  Model for the thickness dependence of electron concentration in InN films
  Appl. Phys. Lett. 89, 172109 (2006)
• V.G. Talalaev, J.W. Tomm, A.S. Sokolov, I.V. Shtrom, B.V. Novikov, A.T. Winzer, R. Goldhahn, G. Gobsch, N.D. Zakharov, P. Werner, U. Gösele, G.E. Cirlin, A.A. Tonkikh, V.M. Ustinov, G.G. Tarasov
  Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
  J. Appl. Phys. 100 (8), 083704 (2006)
• A.T. Winzer, G. Gobsch, R. Goldhahn, D. Fuhrmann, A. Hangleiter, A. Dadgar, A. Krost
  Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment
  Phys. Rev. B 74 (12), 125207 (2006)
• C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher
  Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
  Phys. Status Solidi C 3 (6), 2009-2013 (2006)
• V. Cimalla , M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff
  The conductivity of Mg-doped InN
  Phys. Status Solidi C 3 (6), 1721-1724 (2006)
• P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
  Transition energies and Stokes shift analysis for In-rich InGaN alloys
  Phys. Status Solidi B 243 (7), 1572-1576 (2006)
• R. Goldhahn, P. Schley, A.T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
  Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN
  J. Cryst. Growth 288 (2), 273-277 (2006)
• R. Goldhahn, P. Schley, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
  Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
  Phys. Status Solidi A 203 (1), 42-49 (2006)
• A.T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff
  Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
  Appl. Phys. Lett. 88 (2), 024101 (2006)
• P. Streitenberger and D. Zöllner
  Effective growth law from three-dimensional grain growth simulations and new analytical grain size distribution
  Scripta Materialia 55 (5), 461-464 (2006)
• D. Zöllner and P. Streitenberger
  Three Dimensional Normal Grain Growth: Monte Carlo Potts Model Simulation and Analytical Mean Field Theory
  Scripta Materialia 54 (9), 1697-1702 (2006)
• S. Matichyn, M. Lisker, M. Silinskas, B. Garke, E. Burte
  Characterisation of Ferroelectric PbZr_xTi_1-xO₃ (PZT) Thin Films Prepared by Liquid-Delivery Metalorganic Chemical Vapor Deposition
  Integrated Ferroelectrics 81, 289-295 (2006)